公开(公告)号：DE102005052046A1

公开(公告)日：2007-05-03

申请号：DE102005052046

申请日：2005-10-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： NEES DIETER ,  BAUCH LOTHAR ,  GEYER STEFAN ,  BRUCH JENS UWE ,  KLINGBEIL PATRICK ,  SCHUMACHER KARL ,  STAECKER JENS ,  SCHIWON ROBERTO ,  HOMMEN HEIKO ,  BONNESS ANJA

IPC: G03F1/64

Abstract: A lithographic projection photo-mask (5) comprises: (a) a transparent substrate (10) with a pattern (14) of structural elements (16); (b) a frame (18), on the substrate outside the pattern; (c) a protective film (20) above the substrate, forming an enclosed volume filled with purging gas; and (d) an arrangement (32) of absorber within the enclosed volume, to remove harmful materials from the gas and inhibit crystal formation on the mask. A photo-mask (5) for lithographic projection comprises: (a) a transparent substrate (10), provided on its front with a pattern (14) of absorbing, partially absorbing or phase-shifting structural elements (16); (b) a frame (18), located on the front side of the substrate outside the pattern; (c) a protective film (20), located above the substrate on the frame, forming an enclosed volume filled with purging gas; and (d) an absorber arrangement (32), including absorber located in the frame region within the enclosed volume, for removing harmful materials from the purging gas to inhibit crystal formation on the mask. An independent claim is included for a method for using the mask in an exposure plant, involving: (A) supplying the mask into an exposure device from a protective container; (B) carrying out one or more exposure processes in the exposure device using light from an ultraviolet source; and (C) withdrawing the mask from the exposure device into the protective container.

公开(公告)号：DE102004015923A1

公开(公告)日：2005-10-27

申请号：DE102004015923

申请日：2004-03-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WUNNICKE ODO ,  KLINGBEIL PATRICK ,  HIEN STEFAN

IPC: G03F7/20 ,  G03F7/30 ,  G03F7/40 ,  H01L21/66 ,  H01L23/544

Abstract: Test structures (3') have test elements (4') set out as a measuring scale and exposed to asymmetrical unbalanced capillary forces of different amounts during development. Various differential capillary forces act on a test element's resist pin (41') through the geometrical structure of the test elements. Independent claims are also included for the following: (A) A method for optimizing development processes so as to suppress pattern collapse events; (B) and for a method for qualifying wafers in a production line; (C) and for a testing pattern for creating test structures for the inspection of resist structures on wafer surfaces developed from a resist layer.

公开(公告)号：DE102005018737A1

公开(公告)日：2006-10-26

申请号：DE102005018737

申请日：2005-04-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： VOELKEL LARS ,  BAUCH LOTHAR ,  KLINGBEIL PATRICK ,  HERPE JOACHIM ,  VOGT MIRKO

IPC: G03F7/09 ,  G03F7/00 ,  H01L21/31

Abstract: The method involves providing semiconductor wafers with a structured layer/layer stack, and applying an organic anti-reflection layer (41) on the layer/layer stack. A photoresist layer (1) is applied on the anti-reflection layer, and the photoresist layer is exposed in sections by an imaging device and a photomask. The photoresist layer is processed, where a structure of the photomask is formed as an opening in the photoresist layer.

公开(公告)号：DE102005009018A1

公开(公告)日：2006-09-07

申请号：DE102005009018

申请日：2005-02-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： JAHNKE ANDREAS ,  KLINGBEIL PATRICK ,  ZIEBOLD RALF ,  VOELKEL LARS ,  LOPEZ GOMEZ ALBERTO ,  MARSCHNER THOMAS

IPC: G01M11/02 ,  G03F1/00 ,  G03F7/00

Abstract: The method involves forming test structures (2) on a photomask (1), in which each test structure comprises of measuring structures (21) with neighboring structures (22). The measuring structures and neighboring structures are formed using photoresist that influences the scattered light generated by a photolithographic imaging mechanism. The CD (critical dimension) measurements of the measuring structures are determined. The measured CDs are then evaluated as a function of the neighboring structures to evaluate the generated scattered light : An independent claim is included for the photomask used in testing the pholithographic imaging mechanism.