公开(公告)号：DE10154966A1

公开(公告)日：2003-05-22

申请号：DE10154966

申请日：2001-10-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ROGALLI MICHAEL ,  REB ALEXANDER ,  VOELKEL LARS ,  STEGEMANN MAIK

IPC: G03F7/40 ,  H01L21/311 ,  H01L21/3213 ,  G03F7/36 ,  G03F7/20 ,  H01L21/3065

Abstract: The invention relates to a process for the production of a semiconductor apparatus, in which an etch step is carried out after an exposure step using light having a wavelength of 193 nm and a development step, the etch gas used containing an added reactive monomer. As a result, polymerization of the surface and hence sidewall passivation of the photoresist used are achieved.

公开(公告)号：DE50203431D1

公开(公告)日：2005-07-21

申请号：DE50203431

申请日：2002-10-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ROGALLI MICHAEL ,  REB ALEXANDER ,  VOELKEL LARS ,  STEGEMANN MAIK

IPC: G03F7/40 ,  H01L21/311 ,  H01L21/3213

Abstract: The invention relates to a process for the production of a semiconductor apparatus, in which an etch step is carried out after an exposure step using light having a wavelength of 193 nm and a development step, the etch gas used containing an added reactive monomer. As a result, polymerization of the surface and hence sidewall passivation of the photoresist used are achieved.

公开(公告)号：DE10356668A1

公开(公告)日：2005-06-30

申请号：DE10356668

申请日：2003-12-04

Applicant: INFINEON TECHNOLOGIES AG

Inventor： VOELKEL LARS

IPC: G03F7/00 ,  H01L21/027 ,  H01L21/033 ,  H01L21/302 ,  H01L21/31 ,  H01L21/461 ,  H01L21/4763

公开(公告)号：DE10224217A1

公开(公告)日：2003-12-18

申请号：DE10224217

申请日：2002-05-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ROGALLI MICHAEL ,  VOELKEL LARS

IPC: G03C1/492 ,  G03C1/494 ,  G03C1/76 ,  G03F7/039 ,  H01L21/31 ,  H01L21/469 ,  G03F7/038

Abstract: A photosensitive resist ( 100 ) for coating on a semiconductor substrate or a mask comprises a photo acid generator (D), a solvent (E) and at least two different base polymers, of which a first base polymer comprises cycloaliphatic parent structures (A) which substantially absorb incident light at 248 nm and are substantially transparent to incident light at 193 nm, and a second base polymer comprises aromatic parent structures (B) which substantially absorb incident light at 193 nm and are substantially transparent to incident light at 248 nm. If such a resist ( 100 ) is applied in a coat thickness of from 50 to 400 nm to a substrate and the proportion of the second base polymer having the aromatic parent structure is between 1 and 25 mol %, a relatively high structure contrast, better stability to etching and a reduction of defects are advantageously achieved in an exposure at a wavelength of 193 nm. Exposure over the entire depth range of the resist ( 100 ) is ensured thereby.

公开(公告)号：DE102005018737A1

公开(公告)日：2006-10-26

申请号：DE102005018737

申请日：2005-04-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： VOELKEL LARS ,  BAUCH LOTHAR ,  KLINGBEIL PATRICK ,  HERPE JOACHIM ,  VOGT MIRKO

IPC: G03F7/09 ,  G03F7/00 ,  H01L21/31

Abstract: The method involves providing semiconductor wafers with a structured layer/layer stack, and applying an organic anti-reflection layer (41) on the layer/layer stack. A photoresist layer (1) is applied on the anti-reflection layer, and the photoresist layer is exposed in sections by an imaging device and a photomask. The photoresist layer is processed, where a structure of the photomask is formed as an opening in the photoresist layer.

公开(公告)号：DE102005009018A1

公开(公告)日：2006-09-07

申请号：DE102005009018

申请日：2005-02-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： JAHNKE ANDREAS ,  KLINGBEIL PATRICK ,  ZIEBOLD RALF ,  VOELKEL LARS ,  LOPEZ GOMEZ ALBERTO ,  MARSCHNER THOMAS

IPC: G01M11/02 ,  G03F1/00 ,  G03F7/00

Abstract: The method involves forming test structures (2) on a photomask (1), in which each test structure comprises of measuring structures (21) with neighboring structures (22). The measuring structures and neighboring structures are formed using photoresist that influences the scattered light generated by a photolithographic imaging mechanism. The CD (critical dimension) measurements of the measuring structures are determined. The measured CDs are then evaluated as a function of the neighboring structures to evaluate the generated scattered light : An independent claim is included for the photomask used in testing the pholithographic imaging mechanism.

公开(公告)号：DE102004025203A1

公开(公告)日：2005-12-15

申请号：DE102004025203

申请日：2004-05-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： VOELKEL LARS ,  PFORR RAINER ,  LAESSIG ANTJE ,  ELIAN KLAUS ,  HENNIG MARIO ,  NOELSCHER CHRISTOPH ,  KOESTLER WOLFRAM

IPC: G03F7/039 ,  G03F7/16 ,  G03F7/26 ,  G03F7/38

Abstract: Photolithographic production of a photomask by the standard steps of coating the substrate with a photolacquer, heating for solvent removal, illumination, heating and finally developing with a basic medium is such that the photolacquer is coated with an acid at a stage between the solvent removal and the final development step.

公开(公告)号：DE10356668B4

公开(公告)日：2005-11-03

申请号：DE10356668

申请日：2003-12-04

Applicant: INFINEON TECHNOLOGIES AG

Inventor： VOELKEL LARS

IPC: G03F7/00 ,  H01L21/027 ,  H01L21/033 ,  H01L21/302 ,  H01L21/31 ,  H01L21/461 ,  H01L21/4763