公开(公告)号：WO0111673A3

公开(公告)日：2001-07-05

申请号：PCT/DE0002652

申请日：2000-08-09

Applicant: INFINEON TECHNOLOGIES AG ,  HINTERMAIER FRANK

Inventor： HINTERMAIER FRANK

IPC: H01L21/306 ,  C09K13/08 ,  H01L21/311 ,  H01L21/8246 ,  H01L27/105 ,  C04B35/453 ,  C04B35/475 ,  C04B41/53 ,  C23F1/26

CPC classification number: H01L21/31111 ,  C09K13/08

Abstract: The invention relates to a method for etching oxide films containing at least one bismuth oxide, especially a mixed ferroelectric oxide containing bismuth. The inventive method comprises the following steps: a) providing a substrate to which, at least one oxide film is applied, comprising at least one oxide containing bismuth; b) an etching solution is brought into contact with the substrate so that the solution can react with the oxide film, whereby the etching solution contains 2 -20 wt. % of a fluoride ion-donor, 15 -60 wt. % nitric acid and 20 -83 wt. % water; c) the etching solution is removed from the substrate. Said etching solution is also used in a method for structuring oxide films containing bismuth.

Abstract translation: 根据本发明，提供了一种用于蚀刻氧化物膜的方法，其中氧化物膜包含至少一种含铋氧化物，特别是铁电含铋混合氧化物。 该方法包括a。提供基板，其上至少被施加包含至少一种含铋的氧化物膜的步骤），b）中，蚀刻溶液被带入与基片接触，从而使蚀刻溶液可以与氧化膜进行反应， 其中所述蚀刻溶液包含2至20重量％的氟化物离子供体，15至60重量％的硝酸和20至83重量％的水，以及c）将所述蚀刻溶液从所述衬底去除。 蚀刻溶液也用于图案化含铋氧化物膜的工艺。

公开(公告)号：DE69822612D1

公开(公告)日：2004-04-29

申请号：DE69822612

申请日：1998-12-10

Applicant: INFINEON TECHNOLOGIES AG ,  ADVANCED TECH MATERIALS

Inventor： HINTERMAIER FRANK ,  VAN BUSKIRK PETER ,  ROEDER R ,  HENDRIX BRYAN ,  BAUM H ,  DESROCHERS A

IPC: C23C16/40 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L29/00 ,  C23C18/12 ,  C30B25/02

Abstract: Chemical vapor deposition is used to form a film of Bi oxide, Sr oxide, and Ta oxide on a heated substrate by decomposing the precursors of these oxides at the surface of the substrate. The precursor of Bi oxide is a Bi complex which includes at least one amide group and is decomposed and deposited at a temperature lower than 450 DEG C. The film of Bi, Sr, and Ta oxides obtained by low-temperature CVD is predominantly non-ferroelectric, but can be converted into a ferroelectric film by a subsequent heating process.

公开(公告)号：DE59905479D1

公开(公告)日：2003-06-12

申请号：DE59905479

申请日：1999-07-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HINTERMAIER FRANK ,  SCHINDLER GUENTHER ,  HARTNER WALTER

IPC: G11C11/22 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11502

Abstract: The invention relates to a ferroelectric RAM configuration, including a number of storage cells, each of which has a selection transistor and a capacitor device with a ferroelectric dielectric. The capacitor device includes at least two capacitors whose coercive voltages are different from each other.

公开(公告)号：DE59807942D1

公开(公告)日：2003-05-22

申请号：DE59807942

申请日：1998-08-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HINTERMAIER FRANK ,  MAZURE-ESPEJO CARLOS

IPC: B05D7/24 ,  C01G29/00 ,  C01G35/00 ,  C23C16/40 ,  C23C18/12 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L41/24

Abstract: A bismuth-containing ceramic layer is produced using a bismuth precursor dissolved in a formic, acetic or propionic acid solvent. A ceramic layer is produced by (a) dissolving a bismuth precursor in a solvent of an organic acid of formula CnH2n+1COOH (n = 0, 1 or 2) and optionally water; (b) dissolving a further precursor in a further solvent and/or providing a further precursor in the liquid state; and (c) applying the precursors to a substrate and heating. Preferred Feature: The further solvent is the same organic acid or tetrahydrofuran. A strontium-bismuth tantalate layer is formed using a solution of Bi(OAc)3 and Sr(OAc)2 in acetic acid which is heated to above the melting point of a tantalum-containing precursor before mixing with the tantalum-containing precursor in the liquid state.

公开(公告)号：DE19851824C2

公开(公告)日：2002-04-04

申请号：DE19851824

申请日：1998-11-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HINTERMAIER FRANK

IPC: C23C16/44 ,  C23C16/455 ,  C23F4/00

公开(公告)号：DE69822612T2

公开(公告)日：2005-03-17

申请号：DE69822612

申请日：1998-12-10

Applicant: INFINEON TECHNOLOGIES AG ,  ADVANCED TECH MATERIALS

Inventor： HINTERMAIER FRANK ,  VAN BUSKIRK PETER ,  ROEDER R ,  HENDRIX BRYAN ,  BAUM H ,  DESROCHERS A

IPC: C23C16/40 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L29/00 ,  C23C18/12 ,  C30B25/02

Abstract: Chemical vapor deposition is used to form a film of Bi oxide, Sr oxide, and Ta oxide on a heated substrate by decomposing the precursors of these oxides at the surface of the substrate. The precursor of Bi oxide is a Bi complex which includes at least one amide group and is decomposed and deposited at a temperature lower than 450 DEG C. The film of Bi, Sr, and Ta oxides obtained by low-temperature CVD is predominantly non-ferroelectric, but can be converted into a ferroelectric film by a subsequent heating process.

公开(公告)号：DE69823174T2

公开(公告)日：2005-01-20

申请号：DE69823174

申请日：1998-12-10

Applicant: INFINEON TECHNOLOGIES AG ,  ADVANCED TECH MATERIALS

Inventor： HINTERMAIER FRANK ,  VAN BUSKIRK PETER ,  ROEDER R ,  HENDRIX BRYAN ,  BAUM H ,  DESROCHERS A

IPC: C23C16/40 ,  C23C16/56 ,  C30B25/02 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L29/00 ,  C23C18/12

Abstract: Chemical vapor deposition is used to form a film of Bi oxide, Sr oxide, and Ta oxide on a heated substrate by decomposing the precursors of these oxides at the surface of the substrate. The precursor of Bi oxide is a Bi complex which includes at least one carboxylate group and is decomposed and deposited at a temperature lower than 450° C. The film of Bi, Sr, and Ta oxides obtained by low-temperature CVD is predominantly non-ferroelectric, but can be converted into a ferroelectric film by a subsequent heating process.

公开(公告)号：DE59711242D1

公开(公告)日：2004-02-26

申请号：DE59711242

申请日：1997-09-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HINTERMAIER FRANK ,  MAZURE-ESPEJO CARLOS

IPC: H01L21/02 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/8242 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/108 ,  H01L27/115 ,  H01L27/11502 ,  H01L27/11517 ,  H01L29/788 ,  H01L29/792

Abstract: Process for producing an integrated semiconductor memory configuration, in particular one suited to the use of ferroelectric materials as storage dielectrics, in which a conductive connection between one electrode of a storage capacitor and a selection transistor is not produced until after the storage dielectric has been deposited; and a semiconductor memory configuration produced using the production process.

公开(公告)号：DE69813888T2

公开(公告)日：2004-01-29

申请号：DE69813888

申请日：1998-12-10

Applicant: INFINEON TECHNOLOGIES AG ,  ADVANCED TECH MATERIALS

Inventor： VAN BUSKIRK PETER ,  ROEDER R ,  HINTERMAIER FRANK ,  HENDRIX BRYAN ,  BAUM H

IPC: C23C16/04 ,  C23C16/40 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105 ,  H01L21/3205

Abstract: A method is described for the nucleation controlled deposition of ferroelectric thin films by chemical vapor deposition in a novel processing sequence wherein a higher density of bismuth nucleation sites is achieved either by the use of a substrate member which has been treated in a manner to yield a controllably and reproducible rough surface on which SBT films with excellent properties may be produced or by using a chemically modified substrate surface upon which surface chemical properties are modified. Typical techniques for achieving surface roughening include reactive ion etching, inert ion milling and chemical mechanical polishing, each of which may be used to delineate patterned bottom electrodes. The chemical properties of the substrate may be modified by alloy deposition, deposition of seed layers which are then partially or completely in-diffused ion implantation with or without heat treatment and changing the chemistry of the surface by a pre-exposure to chemical agents prior to deposition. The resultant oxide ferroelectric thin films are suitable for use in capacitors, memory devices and the like.

公开(公告)号：DE19929306A1

公开(公告)日：2001-04-05

申请号：DE19929306

申请日：1999-06-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HINTERMAIER FRANK ,  HARTNER WALTER ,  SCHINDLER GUENTHER

IPC: C23C16/04 ,  C23C16/18 ,  H01L21/02 ,  H01L21/285 ,  H01L21/3205 ,  C23C16/06 ,  H01L21/8239