公开(公告)号：JP2006214002A

公开(公告)日：2006-08-17

申请号：JP2005355599

申请日：2005-12-09

Applicant: Infineon Technologies Ag ,  インフィネオン テヒノロギーズ アーゲーInfineon TechnologiesAG

Inventor： HINTZE BERND ,  KUDELKA STEPHAN ,  SUNDQVIST JONAS

IPC: C23C16/34 ,  H01B13/00 ,  H01L21/28 ,  H01L21/285 ,  H01L21/822 ,  H01L27/04

CPC classification number: H01L21/3141 ,  H01L21/318 ,  H01L21/76846 ,  H01L28/60

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor process for forming an electroconductive film having small surface roughness and no continuous particle boundary.
SOLUTION: The electroconductive film 11 comprises two or more different metal nitrides 21, 22 and 23, which are deposited on a substrate 10. Thereby, the electroconductive film 11 acquires a structure consisting of particles with smaller sizes than those in an electroconductive film produced from only titanium nitride. The electroconductive film 11 also acquires a smoother surface and smaller thickness than those of a film made of pure titanium nitride.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种半导体工艺，用于形成具有小的表面粗糙度和没有连续的粒子边界的导电膜。 解决方案：导电膜11包含沉积在基板10上的两种或更多种不同的金属氮化物21,22和23.由此，导电膜11获得由尺寸小于导电膜 仅由氮化钛制成的薄膜。 导电膜11还具有比由纯氮化钛制成的膜更平滑的表面和更小的厚度。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：DE102004059668B3

公开(公告)日：2006-07-13

申请号：DE102004059668

申请日：2004-12-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SUNDQVIST JONAS ,  HINTZE BERND ,  KUDELKA STEPHAN

IPC: H01L21/3205 ,  H01L21/8242

Abstract: In a method for producing a conductive layer a substrate is provided. On the substrate, a layer includes at least two different metal nitrides. In one embodiment, on a surface of the substrate a first metal nitride layer is deposited, followed by a second metal nitride layer formed thereon. A third metal layer is then deposited on a surface of the second metal nitride layer.

公开(公告)号：DE102006024214A1

公开(公告)日：2007-11-29

申请号：DE102006024214

申请日：2006-05-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HINTZE BERND ,  BERNHARDT HENRY ,  BERNHARDT FRANK

IPC: H01L21/8242 ,  H01L27/108

Abstract: The method involves forming a metal oxide layer (302) and a metal nitride layer (303). The metal nitride layer is oxidized in order to form another metal oxide layer. The layer sequence is heated in order to form a mixing layer from the two metal oxide layers. The metal oxide layer (302) is made of aluminum oxide and the metal nitride layer is made of titanium nitride. The metal oxide and the metal nitride layers are formed by an atomic layer deposition process.

公开(公告)号：DE10344612A1

公开(公告)日：2005-05-04

申请号：DE10344612

申请日：2003-09-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HINTZE BERND ,  WODARZ MARK ,  WINZIG HUBERT ,  GSCHWANDTNER ALEXANDER ,  SCHEDLBAUER OLIVER

IPC: C23C16/44 ,  H01L21/314 ,  C23F4/00

Abstract: Use of a mixture of a fluorine-containing and chlorine-containing gas for cleaning atomic layer deposition reactors in which the reaction mixture produced is fed into the reaction chamber to remove residues in the reactor chamber.