公开(公告)号：WO2005043623A2

公开(公告)日：2005-05-12

申请号：PCT/EP2004052594

申请日：2004-10-20

Applicant: INFINEON TECHNOLOGIES AG ,  GSCHWANDTNER ALEXANDER ,  HOLZ JUERGEN ,  SCHRENK MICHAEL

Inventor： GSCHWANDTNER ALEXANDER ,  HOLZ JUERGEN ,  SCHRENK MICHAEL

IPC: C23C14/06 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/511 ,  H01L21/02 ,  H01L21/318 ,  H01L21/768 ,  H01L23/522 ,  H01L27/08

CPC classification number: C23C16/45542 ,  C23C16/345 ,  C23C16/45523 ,  C23C16/511 ,  H01L21/318 ,  H01L21/3185 ,  H01L21/76807 ,  H01L23/5223 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention relates to a method that permits the direct application of a dielectric layer to a metallic layer containing copper. According to said method, two process gases (26, 28) are excited by means of respectively different plasma powers for each substrate surface or one of the process gases (26) is excited by means of a plasma and the other process gas (28) is not excited.

Abstract translation: 解释措施，除其他外， 允许电介质层的上的含铜金属的直接应用。 因此，两种处理气体是（26,28），兴奋与每个衬底表面相互不同的等离子体功率或处理气体（26）被激发的等离子和其它工艺气体（28）不被激励。

公开(公告)号：DE59913489D1

公开(公告)日：2006-07-06

申请号：DE59913489

申请日：1999-03-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GSCHWANDTNER ALEXANDER ,  INNERTSBERGER GUDRUN ,  GRASSL ANDREAS ,  FROESCHLE BARBARA ,  KERBER MARTIN ,  MATTHEUS ALEXANDER

IPC: H01L21/304 ,  H01L21/306 ,  H01L21/316

Abstract: Fluorine is deposited on a semiconductor substrate surface according to a novel process. A semiconductor substrate is placed in a reaction chamber and the substrate surface is wetted with water and/or alcohol. A compound containing fluorine is led to the substrate surface, so that a cleaned semiconductor surface covered with fluorine is produced, and the compound containing fluorine is removed from the reaction chamber. The cleaned semiconductor surface covered with fluorine is then wetted with a mixture containing at least 10% by volume of water and at least 10% by volume of alcohol, for producing a cleaned semiconductor surface covered with a predetermined amount of fluorine. The predetermined amount of fluorine is lower the higher a proportion of water in the mixture is chosen to be. Then, the water and the alcohol are removed from the semiconductor surface.

公开(公告)号：DE102008056390A1

公开(公告)日：2010-08-19

申请号：DE102008056390

申请日：2008-11-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FOERG RAIMUND ,  GSCHWANDTNER ALEXANDER ,  LEHNERT WOLFGANG ,  POMPL STEFAN

IPC: B82B1/00 ,  H01L27/08 ,  H01L21/82 ,  H01L29/94

Abstract: Eine Halbleitervorrichtung umfasst eine Halbleiterschicht mit einer ersten Elektrode, die durch ein gesintertes, leitfähiges, poröses Granulat gebildet ist und die in oder auf der Halbleiterschicht oder in oder auf zumindest einer auf der Halbleiterschicht angeordneten isolierenden Schicht gebildet ist; ferner ein dielektrisches Material, das die Oberfläche des gesinterten, leitfähigen, porösen Granulats bedeckt, und eine zweite Elektrode, die das dielektrische Material zumidnest teilweise bedeckt, wobei das dielektrische Material die zweite Elektrode von der ersten Elektrode elektrisch isoliert.

公开(公告)号：DE102004005385A1

公开(公告)日：2005-10-20

申请号：DE102004005385

申请日：2004-02-03

Applicant: INFINEON TECHNOLOGIES AG ,  ASM INT

Inventor： GSCHWANDTNER ALEXANDER ,  KNAPP MARTIN

IPC: C23C16/30 ,  C23C16/40 ,  C23C18/12 ,  H01L21/314 ,  H01L21/316 ,  C07F7/00

Abstract: The present invention relates to the use of a highly concentrated solution of one or more hafnium alkoxides as precursors for hafnium oxide and hafnium oxynitride layers. The present invention relates in particular to the use of a 30 to 90% strength by weight solution of one or more hafnium alkoxides for producing hafnium oxide and hafnium oxynitride layers for CVD or ALD methods. In addition, the invention relates to a process for the production of a hafnium oxide and hafnium oxynitride layer on an article to be coated, and a hafnium alkoxide solution which contains 30 to 90% by weight of one or more hafnium alkoxides. In a further embodiment of the invention, hafnium is replaced by zirconium in said compounds.

公开(公告)号：DE10344612A1

公开(公告)日：2005-05-04

申请号：DE10344612

申请日：2003-09-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HINTZE BERND ,  WODARZ MARK ,  WINZIG HUBERT ,  GSCHWANDTNER ALEXANDER ,  SCHEDLBAUER OLIVER

IPC: C23C16/44 ,  H01L21/314 ,  C23F4/00

Abstract: Use of a mixture of a fluorine-containing and chlorine-containing gas for cleaning atomic layer deposition reactors in which the reaction mixture produced is fed into the reaction chamber to remove residues in the reactor chamber.

公开(公告)号：DE102008056390B4

公开(公告)日：2013-10-10

申请号：DE102008056390

申请日：2008-11-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FOERG RAIMUND ,  GSCHWANDTNER ALEXANDER ,  LEHNERT WOLFGANG ,  POMPL STEFAN

IPC: H01L27/08 ,  B82B1/00 ,  H01L21/82 ,  H01L29/94

Abstract: Halbleitervorrichtung, die folgende Merkmale aufweist: eine Halbleiterschicht (102); eine erste Elektrode (104), die aus einem porösen, durch Sintern eines leitfähigen Granulats erzeugten Sinterkörper gebildet ist und die in oder auf der Halbleiterschicht (102) oder in oder auf zumindest einer über die Halbleiterschicht (102) angeordneten isolierenden Schicht gebildet ist, und wobei die erste Elektrode (104) von der Halbleiterschicht bzw. von der isolierenden Schicht durch zumindest eine Barrierenschicht (110, 112) getrennt ist, wobei die Barrierenschicht (110, 112) eine Diffusion von Metall aus der ersten Elektrode (104) in die Halbleiterschicht (102) unterdrückt; ein dielektrisches Material (106), das eine Oberfläche des porösen, durch Sintern eines leitfähigen Granulats erzeugten Sinterkörpers bedeckt; und eine zweite Elektrode (108), die das dielektrische Material (106) zumindest teilweise bedeckt, wobei das dielektrische Material (106) die zweite Elektrode (108) von der ersten Elektrode (104) elektrisch isoliert.

公开(公告)号：DE10027914B4

公开(公告)日：2007-03-08

申请号：DE10027914

申请日：2000-05-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DAHL CLAUS ,  ROBL WERNER ,  ROEHNER MICHAEL ,  GSCHWANDTNER ALEXANDER ,  JURK REINHARD ,  THEWES ROLAND

IPC: H01L29/78 ,  H01L21/336 ,  H01L23/00 ,  H01L23/532 ,  H01L29/06 ,  H01L29/40

公开(公告)号：DE10350752A1

公开(公告)日：2005-06-09

申请号：DE10350752

申请日：2003-10-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHRENK MICHAEL ,  HOLZ JUERGEN ,  GSCHWANDTNER ALEXANDER

IPC: C23C14/06 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/511 ,  H01L21/02 ,  H01L21/318 ,  H01L21/768 ,  H01L23/522 ,  H01L27/08 ,  H01L21/822 ,  H01L21/314

Abstract: Process for forming a dielectric. The process may include forming the dielectric on a metallization and capacitor arrangement. The process allows the direct application of a dielectric layer to a copper-containing metallization. Accordingly, two process gases may be excited with different plasma powers per unit substrate area, or one process gas may be excited with a plasma and another process gas may not be excited.

公开(公告)号：DE102007002965A1

公开(公告)日：2008-07-24

申请号：DE102007002965

申请日：2007-01-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  GSCHWANDTNER ALEXANDER ,  WIEBAUER WOLFGANG ,  FRANK MANFRED ,  SCHULZE HANS-JOACHIM

IPC: H01L29/06 ,  H01C7/10 ,  H01L29/78

Abstract: The method involves producing a layer (11') with silicon grains at a surface of a trench (103) of a semiconductor body (100), and separating individual silicon grains. A dielectric layer (104) is produced on the silicon grains in between the separated silicon grains, where the separation of individual silicon grains is performed by etching. The separation of the silicon grains is implemented by an oxidation step for surface proximity oxidation of the layer with silicon grains, where the dielectric layer is formed as a semi-isolating layer comprising polysilicon.

公开(公告)号：DE19513749B4

公开(公告)日：2004-07-01

申请号：DE19513749

申请日：1995-04-11

Applicant: INFINEON TECHNOLOGIES AG ,  MATTSON THERMAL PRODUCTS GMBH

Inventor： MAURER MICHAEL ,  LERCH WILFRIED ,  GSCHWANDTNER ALEXANDER

IPC: G01J5/00 ,  G01J5/10 ,  G01J5/58 ,  G01N21/55

Abstract: A method and apparatus for measuring the emission coefficient of a semiconductor material for light of wavelength lambda having photon energy less than the semiconductor bandgap energy is introduced. The reflection coefficient for the light of wavelength lambda is measured while the semiconductor material is being irradiated with sufficient light having photon energy greater than the bandgap energy that the semiconductor material transmits little light of wavelength lambda , and the emission coefficient is calculated from the measured reflection coefficient. The temperature of the semiconductor material can be calculated from the emission coefficient and the measured intensity of the thermally emitted radiation of wavelength lambda .