公开(公告)号：JP2006309756A

公开(公告)日：2006-11-09

申请号：JP2006113569

申请日：2006-04-17

Applicant: Infineon Technologies Ag ,  インフィネオン テクノロジーズ アクチエンゲゼルシャフト

Inventor： STAHL ERNST ,  HOUGHTON RUSSELL J ,  SEITZ HELMUT

IPC: G05F3/24 ,  G11C11/407 ,  H01L21/822 ,  H01L27/04 ,  H03F3/34

CPC classification number: G05F3/30 ,  G11C5/143 ,  G11C5/147 ,  G11C11/4074 ,  G11C11/4076

Abstract: PROBLEM TO BE SOLVED: To provide a reference circuit for generating a voltage depending on temperatures, which is used for a mobile information device. SOLUTION: The reference circuit 100 for generating the voltage depending on the temperatures, comprising: a differential amplifier 104; a capacitor 108; a first transistor 106, a first resistor element 110, and a first diode 112, which configure a first circuit; a second resistor element 114 configuring a second circuit; and a second transistor 116 and a third resistor element 118, which configure a third circuit. An input unit 120, which receives a minus voltage of the differential amplifier 104, receives an input voltage VIN, and an output unit 122 connects to one side of the condenser 108, a gate for the first transistor 106, and a gate for the second transistor 116; the first circuit generates a current ITD depending on the temperatures and the second circuit generates a first current ICC. The third circuit is configured for the first current ICC for the second circuit and the current ITD depending on the temperatures such that the third circuit may generate a voltage VREF depending on the temperatures. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供用于生成用于移动信息设备的根据温度的电压的参考电路。 解决方案：用于根据温度产生电压的参考电路100，包括：差分放大器104; 电容器108; 配置第一电路的第一晶体管106，第一电阻元件110和第一二极管112; 配置第二电路的第二电阻元件114; 以及配置第三电路的第二晶体管116和第三电阻器元件118。 接收差分放大器104的负电压的输入单元120接收输入电压VIN，并且输出单元122连接到电容器108的一侧，用于第一晶体管106的栅极和第二晶体管的栅极 晶体管116; 第一电路根据温度产生电流ITD，第二电路产生第一电流ICC。 第三电路被配置用于第二电路的第一电流ICC和根据温度的当前ITD，使得第三电路可以根据温度产生电压VREF。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：DE102005049204A1

公开(公告)日：2006-05-04

申请号：DE102005049204

申请日：2005-10-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BROX MARTIN ,  HOUGHTON RUSSELL J ,  SCHNEIDER HELMUT ,  KIESER-SCHOENIGER SABINE

IPC: G11C11/407

Abstract: A semiconductor memory having at least one memory cell adapted to store a data value, and adapted to be connected to a data line through a switch device controlled by a control signal. The invention also relates to a tri-state driver device for driving the control signal. Further, there is a method for operating a memory, in which the memory has a memory cell adapted to store a data value, and adapted to be connected to a data line through a switch device controlled by a control signal.

公开(公告)号：DE102006017794A1

公开(公告)日：2006-12-14

申请号：DE102006017794

申请日：2006-04-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STAHL ERNST ,  SEITZ HELMUT ,  HOUGHTON RUSSELL J

IPC: G11C11/4074 ,  G11C11/4076

Abstract: A random access memory including an array of single transistor memory cells and a voltage source. The voltage source is configured to receive a boosted supply voltage and a reference voltage. The voltage source is configured to provide an output voltage out of the boosted supply voltage and based on the reference voltage.