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    Method and device for performing standby mode in random access memory
    1.
    发明专利
    Method and device for performing standby mode in random access memory 有权
    用于在随机访问存储器中执行待机模式的方法和设备

    公开(公告)号：JP2006309933A

    公开(公告)日：2006-11-09

    申请号：JP2006125982

    申请日：2006-04-28

    Applicant: Infineon Technologies Ag ,  インフィネオン テクノロジーズ アクチエンゲゼルシャフト

    Inventor： SEITZ HELMUT ,  MENKE MANFRED

    IPC: G11C11/407 ,  G06F1/26 ,  G11C11/403

    CPC classification number: G11C11/406 ,  G11C11/4074 ,  G11C11/4076 ,  G11C2207/2227 ,  G11C2211/4067

    Abstract: PROBLEM TO BE SOLVED: To perform efficient power source control while preventing a malfunction in a memory device provided with a low power consumption mode. SOLUTION: The memory device includes a power source system having many power source devices for supplying voltage or current to the memory device, a controller for supplying, into the power source system, a state control signal to instruct the power source devices to be in an active state or a standby state, and a self-refresh oscillator for generating a self-refresh clock signal with a suitable cycle for refreshing memory cells of the memory device. The controller uses the self-refresh clock signal, and delays transition of the state control signal from the active state to the standby state, relatively to the state change corresponding to at least one external signal receiving from the memory device. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：为了在防止具有低功耗模式的存储器件中的故障的同时进行高效的电源控制。 解决方案：存储器件包括具有用于向存储器件提供电压或电流的许多电源装置的电源系统，用于向电源系统提供状态控制信号以指示电源装置 处于活动状态或待机状态，以及自刷新振荡器，用于产生具有适当周期的自刷新时钟信号，用于刷新存储器件的存储单元。 控制器使用自刷新时钟信号，并且将状态控制信号从活动状态转移到待机状态，相对于与从存储器件接收的至少一个外部信号相对应的状态改变。 版权所有（C）2007，JPO＆INPIT

    Memory with starting circuit
    2.
    发明专利
    Memory with starting circuit 审中-公开
    具有启动电路的记忆

    公开(公告)号：JP2006309934A

    公开(公告)日：2006-11-09

    申请号：JP2006126277

    申请日：2006-04-28

    Applicant: Infineon Technologies Ag ,  インフィネオン テクノロジーズ アクチエンゲゼルシャフト

    Inventor： SEITZ HELMUT

    IPC: G11C11/408

    CPC classification number: G11C8/08 ,  G11C7/12 ,  G11C7/20 ,  G11C11/4072 ,  G11C11/4074 ,  G11C11/4085 ,  G11C11/4094

    Abstract: PROBLEM TO BE SOLVED: To make it possible to omit a discharge device for limiting a VBB potential by reducing the size and/or the number of VBB pumps.
    SOLUTION: The memory includes a starting circuit configured so that a second voltage is reduced through parasitic coupling capacitance by boosting a first voltage up to a first value in the state in which the second voltage is grounded and by reducing the first voltage from the first value to a second value in the state in which the second voltage is made floating, and the second voltage is supplied so as to be reduced to a third value in the state in which the first voltage is lower than the second value.
    COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：通过减小VBB泵的尺寸和/或数量，可以省略限制VBB电位的放电装置。 解决方案：存储器包括启动电路，其被配置为通过在第二电压接地的状态下将第一电压升高到第一值，并且通过将第一电压从第 在第一电压低于第二值的状态下，使第二电压被浮置为第二值，并将第二电压提供为第三值。 版权所有（C）2007，JPO＆INPIT

    Reference circuit for generating voltage depending on temperature
    3.
    发明专利
    Reference circuit for generating voltage depending on temperature 审中-公开
    用于产生依赖于温度的电压的参考电路

    公开(公告)号：JP2006309756A

    公开(公告)日：2006-11-09

    申请号：JP2006113569

    申请日：2006-04-17

    Applicant: Infineon Technologies Ag ,  インフィネオン テクノロジーズ アクチエンゲゼルシャフト

    Inventor： STAHL ERNST ,  HOUGHTON RUSSELL J ,  SEITZ HELMUT

    IPC: G05F3/24 ,  G11C11/407 ,  H01L21/822 ,  H01L27/04 ,  H03F3/34

    CPC classification number: G05F3/30 ,  G11C5/143 ,  G11C5/147 ,  G11C11/4074 ,  G11C11/4076

    Abstract: PROBLEM TO BE SOLVED: To provide a reference circuit for generating a voltage depending on temperatures, which is used for a mobile information device. SOLUTION: The reference circuit 100 for generating the voltage depending on the temperatures, comprising: a differential amplifier 104; a capacitor 108; a first transistor 106, a first resistor element 110, and a first diode 112, which configure a first circuit; a second resistor element 114 configuring a second circuit; and a second transistor 116 and a third resistor element 118, which configure a third circuit. An input unit 120, which receives a minus voltage of the differential amplifier 104, receives an input voltage VIN, and an output unit 122 connects to one side of the condenser 108, a gate for the first transistor 106, and a gate for the second transistor 116; the first circuit generates a current ITD depending on the temperatures and the second circuit generates a first current ICC. The third circuit is configured for the first current ICC for the second circuit and the current ITD depending on the temperatures such that the third circuit may generate a voltage VREF depending on the temperatures. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：提供用于生成用于移动信息设备的根据温度的电压的参考电路。 解决方案：用于根据温度产生电压的参考电路100，包括：差分放大器104; 电容器108; 配置第一电路的第一晶体管106，第一电阻元件110和第一二极管112; 配置第二电路的第二电阻元件114; 以及配置第三电路的第二晶体管116和第三电阻器元件118。 接收差分放大器104的负电压的输入单元120接收输入电压VIN，并且输出单元122连接到电容器108的一侧，用于第一晶体管106的栅极和第二晶体管的栅极 晶体管116; 第一电路根据温度产生电流ITD，第二电路产生第一电流ICC。 第三电路被配置用于第二电路的第一电流ICC和根据温度的当前ITD，使得第三电路可以根据温度产生电压VREF。 版权所有（C）2007，JPO＆INPIT

    5.
    发明专利
    未知

    公开(公告)号：DE102006017794A1

    公开(公告)日：2006-12-14

    申请号：DE102006017794

    申请日：2006-04-18

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： STAHL ERNST ,  SEITZ HELMUT ,  HOUGHTON RUSSELL J

    IPC: G11C11/4074 ,  G11C11/4076

    Abstract: A random access memory including an array of single transistor memory cells and a voltage source. The voltage source is configured to receive a boosted supply voltage and a reference voltage. The voltage source is configured to provide an output voltage out of the boosted supply voltage and based on the reference voltage.

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