公开(公告)号：DE10100820A1

公开(公告)日：2002-08-01

申请号：DE10100820

申请日：2001-01-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KECK MARTIN ,  ZIEGLER WOLFRAM ,  LIEBE ROMAN

IPC: G03F1/00

Abstract: The method involves producing a layout pattern from a circuit design, determining the structural density in the pattern and, if it does not exceed a threshold value, transferring the pattern to the mask and checking for fault-free transfer of the pattern. If the threshold is exceeded in at least one area the area is indicated, the pattern is transferred after user release and the mask checked for faultless transfer up the indicated area(s).

公开(公告)号：DE10100820B4

公开(公告)日：2005-09-22

申请号：DE10100820

申请日：2001-01-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KECK MARTIN ,  ZIEGLER WOLFRAM ,  LIEBE ROMAN

IPC: G03F1/00

公开(公告)号：DE102004009173A1

公开(公告)日：2005-09-15

申请号：DE102004009173

申请日：2004-02-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HENKEL THOMAS ,  KECK MARTIN ,  THIELE JOERG ,  MEYER DIRK

IPC: G03F7/20 ,  G03F9/00

Abstract: In order to compensate for the shortening of line ends ( 30 ) in a circuit design of an integrated circuit, in a first step, hammerheads or serifs ( 50 ) are attached to the line ends ( 30 ) by means of rule-based OPC corrections. The line ends modified in this way are revised further by downstream application of a simulation-based OPC correction before mask or direct wafer writer data are calculated. As a result of the formation of the pattern revised by the simulation-based correction on the wafer, there actually arises in an approximate manner owing to the proximity effects the layout created by the rule-based correction with the supplemented line ends ( 30 ) on the wafer.

公开(公告)号：DE102005003001A1

公开(公告)日：2006-08-03

申请号：DE102005003001

申请日：2005-01-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KECK MARTIN

IPC: G03F7/20

Abstract: The method involves applying two simulation models for correction of an optical proximity effect, which is represented by two set of model parameters, on two structural units of two classes, respectively, such that the structural units are adapted in their geometrical form and size. The model parameters are variably selected, and a sample is stored with the structural units for transmission of the sample on a substrate.