公开(公告)号：DE10143723B4

公开(公告)日：2006-09-28

申请号：DE10143723

申请日：2001-08-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BODENDORF CHRISTOF TILMANN ,  THIELE JOERG

IPC: G03F1/00 ,  G03F1/36

Abstract: A method of producing a layout for a mask for use in semiconductor production includes a two-stage, iterative optimization of the position of scatter bars in relation to main structures being carried out. In a first stage, following first production of scatter bars and carrying out an OPC, scatter bars are again generated based on the corrected main structures. A renewed OPC is then carried out, followed by the renewed formation of scatter bars. This is repeated until the layout has been optimized sufficiently. Then, in the second stage, defocused exposure of the layout is simulated and, if required, further adaptation of the scatter bars is carried out. The first and second iterative stages can also be employed independently of each other. The common factor in the iterations is that the scatter bar positions are varied with each iteration and is therefore optimized.

公开(公告)号：DE10133127C2

公开(公告)日：2003-06-26

申请号：DE10133127

申请日：2001-07-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： THIELE JOERG ,  ANKE INES ,  HAFFNER HENNING ,  SEMMLER ARMIN ,  FISCHER WERNER

IPC: G03F1/00 ,  G03F1/36 ,  G03F7/20

公开(公告)号：DE102005003183A1

公开(公告)日：2006-07-27

申请号：DE102005003183

申请日：2005-01-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MOUKARA MOLELA ,  WINKLER THORSTEN ,  ZEILER KARSTEN ,  THIELE JOERG ,  KOESTLER WOLFRAM ,  HENNIG MARIO

IPC: G03F7/20 ,  G03F7/00 ,  H01L21/28 ,  H01L21/768

Abstract: The method involves mapping a mask with a dipole blind on a wafer. Main semiconductor structures are manufactured by mapping the mask, where the structures are aligned perpendicular to a dipole axis and parallel to a mapping axis. Another mask with a mask structure is mapped with another blind on the wafer, where a compound semiconductor structure is manufactured on the wafer by interconnecting two of the main semiconductor structures. Independent claims are also included for the following: (A) a mapping system for manufacturing semiconductor structures (B) a mapping set with a dipole mask.

公开(公告)号：DE102005005591B3

公开(公告)日：2006-07-20

申请号：DE102005005591

申请日：2005-02-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SEMMLER ARMIN ,  MEYER DIRK ,  KOEHLE RODERICK ,  NOELSCHER CHRISTOPH ,  HEISMEIER MICHAEL ,  THIELE JOERG ,  LUDWIG BURKHARD

IPC: G03F1/00 ,  G03F1/36 ,  G03F7/20

Abstract: The method involves dividing a pattern of a circuit design iteratively, into corresponding base patterns, to classify the parts of the pattern into the structural components which complies with the base patterns. Further base patterns are provided for the parts which are not classified. The geometries of the structural components are optimized and the optimized base patterns are inserted into the circuit design. An independent claim is also included for a use of a structural component geometry optimizing method for the production of a photomask.

公开(公告)号：DE102004009173A1

公开(公告)日：2005-09-15

申请号：DE102004009173

申请日：2004-02-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HENKEL THOMAS ,  KECK MARTIN ,  THIELE JOERG ,  MEYER DIRK

IPC: G03F7/20 ,  G03F9/00

Abstract: In order to compensate for the shortening of line ends ( 30 ) in a circuit design of an integrated circuit, in a first step, hammerheads or serifs ( 50 ) are attached to the line ends ( 30 ) by means of rule-based OPC corrections. The line ends modified in this way are revised further by downstream application of a simulation-based OPC correction before mask or direct wafer writer data are calculated. As a result of the formation of the pattern revised by the simulation-based correction on the wafer, there actually arises in an approximate manner owing to the proximity effects the layout created by the rule-based correction with the supplemented line ends ( 30 ) on the wafer.

公开(公告)号：DE10340611A1

公开(公告)日：2005-03-24

申请号：DE10340611

申请日：2003-08-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MOUKARA MOLELA ,  LUDWIG BURKHARD ,  THIELE JOERG ,  AHRENS MARCO ,  KOEHLE RODERICK ,  PFORR RAINER ,  MORGANA NICOLO

IPC: G03C5/00 ,  G03F1/00 ,  G03F7/20 ,  G03F9/00 ,  G03F1/14

Abstract: Lithographic mask contains angular structure element (0) formed by two opaque segments (01,2). Structure element contains convex section (A) facing over obtuse angle (alpha). Adjacent to angular element is transparent structure (T), consisting of two transparent segments (T1,2), formed axis-symmetrically to angle (alpha) bisecting line (WH). Along this line in convex section, transparent structure is wider than standard width. Lithographic mask contains angular structure element (0) formed by two opaque segments (01,2). Structure element contains convex section (A) facing over obtuse angle (alpha). Adjacent to angular element is transparent structure (T).Transparent structure is formed in two parts, i.e. consisting of two different transparent segments (T1,2), formed axis-symmetrically to angle (alpha) bisecting line (WH). Along this line in convex section, transparent structure is wider than used standard width of transparent segments.

公开(公告)号：DE102005003184A1

公开(公告)日：2006-07-27

申请号：DE102005003184

申请日：2005-01-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MOUKARA MOLELA ,  WINKLER THORSTEN ,  ZEILER KARSTEN ,  KOEHLE RODERICK ,  THIELE JOERG ,  DETTMANN WOLFGANG ,  MITTERMEIER ARMELLE BENEDICTE ,  HENNIG MARIO ,  KOESTLER WOLFRAM

IPC: G03F1/00 ,  H01L21/8242

Abstract: The mask has a mask structure (30) in a chromium layer (3), a halftone layer (4) or a glass layer (5) of the tri-tone mask. The structure is surrounded by a strip of the halftone layer with a predetermined width. The strip creates a sharp contrast between a passage from the opaque layer to the glass layer. The width of the strip is constant and parallel to an edge of the structure and amounts between 50 and 200 nanometers. Independent claims are also included for the following: (A) a method of manufacture of a tri-tone mask (B) utilization of a tri-tone mask for the lithographic manufacture of a semiconductor device.

公开(公告)号：DE10356693A1

公开(公告)日：2005-07-14

申请号：DE10356693

申请日：2003-11-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SEMMLER ARMIN ,  THIELE JOERG ,  MEYNE CHRISTIAN ,  BODENDORF CHRISTOF

IPC: G03F1/00 ,  G06F17/50

Abstract: A method for producing for a mask a mask layout which avoids aberrations in which a provisional auxiliary mask layout produced, in particular in accordance with a prescribed electrical circuit diagram is converted into the mask layout with the aid of an OPC method. At least two different OPC variants are used in the course of the OPC method by subdividing the original auxiliary mask layout into at least two layout areas and processing each of the layout areas in accordance with one of the at least two OPC variants.

公开(公告)号：DE10310137A1

公开(公告)日：2004-10-07

申请号：DE10310137

申请日：2003-03-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PFORR RAINER ,  THIELE JOERG ,  HENNIG MARIO ,  DETTMANN WOLFGANG ,  ZEILER KARSTEN

IPC: G03F1/00 ,  G03F7/20 ,  G03F1/14

公开(公告)号：DE10208756A1

公开(公告)日：2003-10-02

申请号：DE10208756

申请日：2002-02-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： NOELSCHER CHRISTOPH ,  SCHILZ CHRISTOF ,  THIELE JOERG

IPC: G03F1/00 ,  G03F7/20 ,  G03F1/14

Abstract: Half tone phase mask comprises a half tone region (A) having a strongly reduced transmission and a phase-rotating property based on a neighboring second region (B) which is transparent to light. A phase rotation occurs in the transparent region through a corresponding path when light passes through the path of the absorber thickness in the first region. Independent claims are also included for the following: (1) process for the production of a half tone phase mask; and (2) process for the production of an alternating phase mask.