公开(公告)号：DE10201781A1

公开(公告)日：2003-08-07

申请号：DE10201781

申请日：2002-01-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： THEUS HORST ,  AUBURGER ALBERT ,  KLOSE FRANK ,  LEHNER RUDOLF

IPC: H01L21/60 ,  H01L23/367 ,  H01L23/433 ,  H01L23/66 ,  H01L23/36 ,  H01L23/50 ,  H01L23/64 ,  H01L21/50

Abstract: A radio-frequency power component and a radio-frequency power module, as well as to methods for producing them are encompassed. The radio-frequency power component has a semiconductor chip that is suitable for flip chip mounting. The semiconductor chip has an active upper face that produces power losses. This active upper face is covered by an electrically isolating layer leaving free contact surfaces, with a heat-dissipating metal layer being applied to its upper face. The metal layer directly dissipates the heat losses from the active semiconductor structures.

公开(公告)号：DE10201781B4

公开(公告)日：2007-06-06

申请号：DE10201781

申请日：2002-01-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： THEUS HORST ,  AUBURGER ALBERT ,  KLOSE FRANK ,  LEHNER RUDOLF

IPC: H01L23/36 ,  H01L21/50 ,  H01L21/60 ,  H01L23/367 ,  H01L23/433 ,  H01L23/50 ,  H01L23/64 ,  H01L23/66

Abstract: A radio-frequency power component and a radio-frequency power module, as well as to methods for producing them are encompassed. The radio-frequency power component has a semiconductor chip that is suitable for flip chip mounting. The semiconductor chip has an active upper face that produces power losses. This active upper face is covered by an electrically isolating layer leaving free contact surfaces, with a heat-dissipating metal layer being applied to its upper face. The metal layer directly dissipates the heat losses from the active semiconductor structures.