Patent search ap:("INFINEON TECHNOLOGIES AG") AND inv:"LAMPRECHT ALEXANDRA" Page 1

1.

发明专利
Production of a trench capacitor comprises filling a trench with a filler, forming an insulating collar, removing the filler, forming a trenched plate using low pressure gas phase doping, etc. 未知

公开(公告)号：DE10014920C1

公开(公告)日：2001-07-26

申请号：DE10014920

申请日：2000-03-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HAUPT MORITZ , SACHSE JENS-UWE , BECKMANN GUSTAV , LAMPRECHT ALEXANDRA , OTTENWAELDER DIETMAR , KRASEMANN ANKE , SCHREMS MARTIN

IPC: H01L21/223 , H01L21/8242

Abstract: Production of a trench capacitor comprises forming a trench (108) in a substrate (101); filling a lower region of the trench with a first filler (152); forming an insulating collar in an upper region of the trench; removing the first filler; forming a trenched plate (165) in the substrate in the surrounding of the lower region of the trench as first capacitor plate using low pressure gas phase doping; forming a dielectric layer to line the lower region of the trench and the inner side of the collar as capacitor dielectric and filling the trench with a conducting second filler as second capacitor plate. Preferred Features: Formation of the trenched plate uses AsH3 or PH3 as doping gas and H2 or He as carrier gas.

2.

发明专利
未知

公开(公告)号：DE10029286C2

公开(公告)日：2003-10-02

申请号：DE10029286

申请日：2000-06-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GAERTNER THOMAS , LAMPRECHT ALEXANDRA , OTTENWAELDER DIETMAR , SCHULZE JOERG

IPC: B05D1/00 , B05D3/04 , C23C16/00 , H01L21/31 , H01L21/316 , H01L21/318 , H01L21/469 , H01L21/66 , H01L21/762

Abstract: Nitrogen processes are monitored by; (i) providing a silicon surface; (ii) subjecting the silicon surface to a nitrogen process; (iii) producing an oxide layer on the silicon surface by thermal oxidation for a specified duration; and (iv) determining a thickness of the oxide layer as a measure for a quality of the nitrogen process.

3.

发明专利
Monitoring of nitrogen processes involves subjecting silicon surface to nitrogen process, producing oxide layer on the surface by thermal oxidation, and determining a thickness of oxide layer as measure for nitrogen process quality 未知

公开(公告)号：DE10029286A1

公开(公告)日：2002-04-18

申请号：DE10029286

申请日：2000-06-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GAERTNER THOMAS , LAMPRECHT ALEXANDRA , OTTENWAELDER DIETMAR , SCHULZE JOERG

IPC: B05D1/00 , B05D3/04 , C23C16/00 , H01L21/31 , H01L21/316 , H01L21/318 , H01L21/469 , H01L21/66 , H01L21/762

Abstract: Nitrogen processes are monitored by; (i) providing a silicon surface; (ii) subjecting the silicon surface to a nitrogen process; (iii) producing an oxide layer on the silicon surface by thermal oxidation for a specified duration; and (iv) determining a thickness of the oxide layer as a measure for a quality of the nitrogen process.

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