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    METHOD FOR PRODUCING AN INSULATION COLLAR IN A TRENCH CAPACITOR
    1.
    发明申请
    METHOD FOR PRODUCING AN INSULATION COLLAR IN A TRENCH CAPACITOR 审中-公开
    方法用于制造绝缘环的沟槽电容器

    公开(公告)号：WO0139256A3

    公开(公告)日：2002-01-17

    申请号：PCT/DE0004114

    申请日：2000-11-22

    Applicant: INFINEON TECHNOLOGIES AG ,  SCHREMS MARTIN ,  KRASEMANN ANKE ,  HAUPT MORITZ ,  STECK SABINE ,  KOEHLER DANIEL

    Inventor： SCHREMS MARTIN ,  KRASEMANN ANKE ,  HAUPT MORITZ ,  STECK SABINE ,  KOEHLER DANIEL

    IPC: H01L21/334 ,  H01L21/8242

    CPC classification number: H01L27/10861 ,  H01L29/66181

    Abstract: The invention relates to a method for producing a trench capacitor. According to said method, after the trench has been formed, an insulating layer (35) is first deposited, from which the insulation collar (75) is subsequently to be formed. The trench (10) is then partially filled with a sacrificial fill material (40) and a thin structural layer (55) is deposited thereon. Spacers are formed from said layer which cover the insulating layer (35) in the upper region (45) of the trench (10). The sacrificial fill material (40) and the insulating layer (35) are then removed completely in the lower region (50) of the trench (10). The insulation collar (75) is thus formed in the upper region (45) of the trench (10).

    Abstract translation: 它提出了一种用于产生严重电容器的方法是在其中将要形成，首先形成沟槽形成绝缘层（35）之后，从所述绝缘环（75）被沉积的后面。 此后，该沟槽（10）与牺牲填充材料（40）被部分地填充，然后图案化的薄层（55）被沉积。 从这些间隔物所形成的覆盖在沟槽（10）的上部区域（45）的绝缘层（35）。 随后，在牺牲填充材料（40）和在所述沟槽（10）的下部区域（50）的绝缘层（35）被完全去除。 这导致绝缘卡圈（75）的沟槽（10）的上部区域（45）。

    2.
    发明专利
    未知

    公开(公告)号：DE19956078B4

    公开(公告)日：2006-12-28

    申请号：DE19956078

    申请日：1999-11-22

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： SCHREML MARTIN ,  KRASEMANN ANKE ,  KOEHLER DANIEL ,  HAUPT MORITZ ,  HENNECKE SABINE

    IPC: H01L21/8242 ,  H01L21/334

    Abstract: A trench capacitor is formed with an insulation collar. After the formation of the trench, firstly an insulating layer is deposited, from which layer the insulation collar will be subsequently formed. Afterward, the trench is partly filled with a sacrificial filling material and a thin patterning layer is deposited thereon. Spacers are formed from that layer and cover the insulating layer in the upper region of the trench. Afterward, the sacrificial filling material and the insulating layer are completely removed in the lower region of the trench. As a result, the insulation collar is produced in the upper region of the trench.

    4.
    发明专利
    未知

    公开(公告)号：DE102004020834A1

    公开(公告)日：2005-11-17

    申请号：DE102004020834

    申请日：2004-04-28

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： STAVREV MOMTCHIL ,  WEGE STEPHAN ,  KLIPP ANDREAS ,  HAUPT MORITZ ,  SPERLICH HANS-PETER

    IPC: H01L21/3065 ,  H01L21/762 ,  H01L21/8234 ,  H01L21/8242

    Abstract: The present invention provides a fabrication method for a semiconductor structure having the steps of providing a semiconductor substrate ( 1 ); providing and patterning a silicon nitride layer ( 3 ) on the semiconductor substrate ( 1 ) as topmost layer of a trench etching mask; forming a trench ( 5 ) in a first etching step by means of the trench etching mask; conformally depositing a liner layer ( 10 ) made of silicon oxide above the resulting structure, which leaves a gap (SP) reaching into the depth in the trench ( 5 ); carrying out a V plasma etching step for forming a V profile of the line layer ( 10 ) in the trench ( 5 ); wherein the liner layer ( 10 ) is pulled back to below the top side of the silicon nitride layer ( 3 ); an etching gas mixture comprises C 5 F 8 , O 2 and an inert gas is used in the V plasma etching step; the ratio (V) of C 5 F 8 /O 2 lies between 2.5 and 3.5; and the selectivity of the V plasma etching step between silicon oxide and silicon nitride is at least 10.

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