公开(公告)号：JP2002093144A

公开(公告)日：2002-03-29

申请号：JP2001197558

申请日：2001-06-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BOEHM THOMAS ,  GOGL DIETMAR ,  MUELLER GERHARD ,  LOEER THOMAS

IPC: G11C11/14 ,  G11C7/12 ,  G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L43/08

Abstract: PROBLEM TO BE SOLVED: To provide a current driver arrangement capable of supplying a large current at a low voltage when the area needs to be small. SOLUTION: In a current driver arrangement described in the above, this problem can be solved by configuring a driver of an n-type field effect transistor and a current source connected in series therewith. Concretely, a current driver arrangement for an MRAM is provided comprising a memory cell field having a plurality of memory cells (Z) at the crossing position of a word line (WL) and a bit line (BL), and drivers (T1, T2) supplied to each end of the above word line (WL) and the above bit line (BL), and allocated to the above word line (WL) and the above bit line (BL).