公开(公告)号：DE10035421A1

公开(公告)日：2002-02-07

申请号：DE10035421

申请日：2000-07-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  LUEDER ELBRECHT ,  HERZOG THOMAS RAINER ,  MARKSTEINERN STEPHAN ,  NESSLER WINFRIED

IPC: H01L37/02 ,  H01L41/22 ,  H01L41/319 ,  H03H3/02 ,  H01L21/283 ,  H01L21/20 ,  H01L21/36 ,  H01L37/00 ,  H01L41/047 ,  H03H9/46

Abstract: At least one bottom electrode (U), a piezoelectric or pyroelectric layer (S) over said bottom electrode and a top electrode (O) over said layer are produced as parts of the layer sequence. The bottom electrode (U) is produced by depositing a conductive material and then chemically-mechanically polished in order to smooth out surface roughness. The thickness of the deposited conductive material is preferably reduced by 10 nm to 100 nm by the chemical-mechanical polishing process.

公开(公告)号：DE10035423C1

公开(公告)日：2001-11-22

申请号：DE10035423

申请日：2000-07-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  LUEDER ELBRECHT ,  HERZOG THOMAS RAINER ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED

IPC: H01L21/28 ,  H01L37/02 ,  H01L41/08 ,  H01L41/09 ,  H01L41/22 ,  H01L41/319 ,  H03H3/02 ,  H03H9/17 ,  H01L21/20 ,  H01L37/00 ,  H01L41/047 ,  H03H9/25

Abstract: Semiconductor element has an auxiliary layer (H) arranged between a lower electrode (U) and a piezoelectric or pyroelectric layer (S). The auxiliary layer promotes the growth of the piezoelectric or pyroelectric layer and consists of amorphous silicon, amorphous silicon oxide or amorphous silicon nitride. An Independent claim is also included for a process for the production of the semiconductor element. Preferred Features: The piezoelectric or pyroelectric layer is made from AlN. The lower electrode and an upper electrode (O) in the layer succession are made from W, Mo, Pt and/or an Al alloy.