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公开(公告)号:JP2000243933A
公开(公告)日:2000-09-08
申请号:JP2000038344
申请日:2000-02-16
Applicant: INFINEON TECHNOLOGIES AG
Inventor: FEURLE ROBERT , MANDEL SABINE , SCHNEIDER HELMUT
IPC: G11C8/00 , G11C5/02 , G11C5/14 , G11C7/18 , H01L21/8242 , H01L27/108
Abstract: PROBLEM TO BE SOLVED: To provide a decoder connecting device for a memory chip having a long bit line. SOLUTION: A dummy region 7 of a decoder 2 based on a bit line twist 8 is provided between a current supply line 3 and a decoder 2. In this case, bit lines BL form a line twist in a bit line twist region 8 in a memory cell field 1. Additional through holes 6 between two metallized surfaces are made in a zone of the decoder region 2 adjacent to the bit line twist region 8.
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公开(公告)号:JP2000252440A
公开(公告)日:2000-09-14
申请号:JP2000046287
申请日:2000-02-23
Applicant: INFINEON TECHNOLOGIES AG
Inventor: FEURLE ROBERT , MANDEL SABINE , SAVIGNAC DOMINIQUE DR , SCHNEIDER HELMUT
IPC: G11C7/18 , H01L21/8242 , H01L23/522 , H01L27/108
Abstract: PROBLEM TO BE SOLVED: To avoid the affect of unevenness of the element at edge part on a crossover region or twist region of a bit line by providing with a bit line comprising no bit line twist part with a dummy contact communicated with another plane. SOLUTION: Bit lines BL1, BL2; BL5, BL6; BL9, BL10 comprise a bit line twist part. Bit lines BL3, BL4, BL7, and BL8 comprise no bit line twist part. In order to avoid a proximity effect caused by discontinuity or unevenness in a region near the word lines, even the bit lines BL3, BL4, BL7, and BL8 comprising no crossover or twist part are provided with dummy contacts 8-11. The dummy contacts 8-11 are connected to a word line plane from upward from a bit line plane, and terminate there. Thus, the effect of unevenness of word line is avoided.
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公开(公告)号:DE50009385D1
公开(公告)日:2005-03-10
申请号:DE50009385
申请日:2000-02-18
Applicant: INFINEON TECHNOLOGIES AG
Inventor: FEURLE ROBERT , MANDEL SABINE , SCHNEIDER HELMUT
IPC: G11C8/00 , G11C5/02 , G11C5/14 , G11C7/18 , H01L21/8242 , H01L27/108
Abstract: A decoder connection configuration for memory chips, in which, in a dummy region of a decoder, the dummy region being caused by a bit line twist, additional plated-through holes are provided between power supply lines and the decoder. By virtue of the bit line twist, the coupling capacitance is practically halved on account of the electrical symmetry.
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