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    Making alignment mark in opaque layer on substrate, forms trenches of differing depth, fills selectively, then adds and polishes further layers to leave defined opaque mark
    2.
    发明专利
    Making alignment mark in opaque layer on substrate, forms trenches of differing depth, fills selectively, then adds and polishes further layers to leave defined opaque mark 未知

    公开(公告)号：DE10259322A1

    公开(公告)日：2004-07-15

    申请号：DE10259322

    申请日：2002-12-18

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： MOLL HANS-PETER ,  HOLLATZ MARK ,  MOTHES KERSTIN

    IPC: G02B7/00 ,  G03F7/20 ,  G03F9/00

    Abstract: Substrate comprises surface (91), first and second trenches (10, 20) of differing depth and width. First layer (50) is applied. Trench sizes and quantity applied ensure that smaller trench (20) is filled, but larger (10) is only partly filled. Second layer (30) is added which has greater etch selectivity compared with the first. Second layer thickness is adjusted during application, such that the first trench (10) is filled completely. The substrate is then chemically-mechanically polished, to lay bare the surface (91) of the substrate, and to form a planar surface over the first and second trenches. The second material is selectively etched to the first material, for partial opening (81) of the first trench, without using a resist- or resin mask. The opaque layer (100) is applied on the plane surface and into the opening (81) of the first trench (10) so that the alignment mark is formed as a depression (201) of the opaque layer, above the opening (81).

    3.
    发明专利
    未知

    公开(公告)号：DE10314574B4

    公开(公告)日：2007-06-28

    申请号：DE10314574

    申请日：2003-03-31

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： MOTHES KERSTIN ,  KLIPP ANDREAS ,  SCHMITT FLORIAN ,  HOLLATZ MARK

    IPC: H01L21/762

    Abstract: Production of a shallow trench insulation structure comprises forming a mask (3) on a substrate (1), forming trenches (2) in the substrate using a mask, selectively depositing a first insulating material (5) to partially fill the trenches with the insulating material in the presence of the mask, and applying a second insulating material (6) on the whole surface of the structure to fill the trenches in the substrate up to the upper side of the mask.

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