公开(公告)号：DE10314574A1

公开(公告)日：2004-10-28

申请号：DE10314574

申请日：2003-03-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MOTHES KERSTIN ,  KLIPP ANDREAS ,  SCHMITT FLORIAN ,  HOLLATZ MARK

IPC: H01L21/762

Abstract: Production of a shallow trench insulation structure comprises forming a mask (3) on a substrate (1), forming trenches (2) in the substrate using a mask, selectively depositing a first insulating material (5) to partially fill the trenches with the insulating material in the presence of the mask, and applying a second insulating material (6) on the whole surface of the structure to fill the trenches in the substrate up to the upper side of the mask.

公开(公告)号：DE102004055649A1

公开(公告)日：2006-05-24

申请号：DE102004055649

申请日：2004-11-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RADECKER JOERG ,  SCHMITT FLORIAN ,  SPERLICH HANS-PETER

IPC: H01L21/762

Abstract: Trench (30) is filled with a filling oxide (200), which has a slower etching rate than an oxide layer (80) coating the trench. The filling oxide and oxide layer are subjected to an etching process. During this, an upper section (210) of the trench side wall (120) adjacent to the surface (20) of the semiconductor structure (10), is freed from the oxide layer. This forms an etching step (220) between the filling oxide and the oxide layer. The trench is coated with a conformal oxide layer. A suitable filling material is polysilicon. An oxide insulant (310) is deposited from the gas phase or a fluid. The etching mask layer is a nitrite.

公开(公告)号：DE10314574B4

公开(公告)日：2007-06-28

申请号：DE10314574

申请日：2003-03-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MOTHES KERSTIN ,  KLIPP ANDREAS ,  SCHMITT FLORIAN ,  HOLLATZ MARK

IPC: H01L21/762

Abstract: Production of a shallow trench insulation structure comprises forming a mask (3) on a substrate (1), forming trenches (2) in the substrate using a mask, selectively depositing a first insulating material (5) to partially fill the trenches with the insulating material in the presence of the mask, and applying a second insulating material (6) on the whole surface of the structure to fill the trenches in the substrate up to the upper side of the mask.