公开(公告)号：JP2003158116A

公开(公告)日：2003-05-30

申请号：JP2002295110

申请日：2002-10-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： OTTOW STEFAN ,  STEUER ULF

IPC: G01N1/28 ,  G01N21/35 ,  H01L21/00 ,  H01L21/306 ,  H01L21/311

Abstract: PROBLEM TO BE SOLVED: To provide a device for evaluating the content of silicon dioxide in a phosphoric acid bus and to provide a system for etching silicon nitride. SOLUTION: The device evaluates the content of silicon dioxide in the phosphoric acid bus etching silicon nitride. The device is provided with a sensor (5) measuring the concentration of NH3 in the phosphoric acid bus, a storage unit (8) storing data regulating the relation between the content of silicon dioxide and the concentration of NH3 , and a device (7) calculating the content of silicon dioxide based on the measured concentration of NH3 and stored data.

公开(公告)号：DE59900511D1

公开(公告)日：2002-01-17

申请号：DE59900511

申请日：1999-05-05

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LEHMANN VOLKER ,  OTTOW STEFAN ,  STENGL REINHARD ,  REISINGER HANS ,  WENDT HERMANN

IPC: G01N37/00 ,  B01J19/00 ,  B01J23/40 ,  B01J37/00 ,  B01J37/02 ,  C12M1/00

Abstract: The invention relates to a reactor system comprising a housing (11) that is connected to a first silicon sheet (12). The silicon sheet (12) has pores (13) extending from a first main surface (14) of the silicon sheet (12) to the interior of the silicon sheet (12), preferably to a second main surface (15) of the silicon sheet (12). A catalyst layer (16) covers the surface of the pores at least in part.

公开(公告)号：DE60104395T2

公开(公告)日：2005-07-21

申请号：DE60104395

申请日：2001-04-19

Applicant: INFINEON TECHNOLOGIES SC300 ,  INFINEON TECHNOLOGIES AG ,  FREESCALE SEMICONDUCTOR INC

Inventor： BREEDEN TERRY ,  TUCKER MIKE ,  OTTOW STEFAN ,  KOESTLER WOLFRAM ,  WISSEL DAN

IPC: H01L21/00 ,  H01L21/302 ,  H01L21/31 ,  H01L21/311 ,  H01L21/314 ,  H01L21/318 ,  H01L21/461 ,  H01L21/469

Abstract: The present invention relates to a recycling procedure for 300 mm nitride dummies which have been previously provided with a special stabilization layer made of silicon dioxide. The recycling procedure is essentially based on selectively wet etching the deposited silicon nitride with respect to the silicon dioxide stabilization layer, preferably with hot phosphoric acid at 160 DEG C. In particular, the present invention provides a method of handling a silicon wafer which is employed as a dummy wafer during a nitride deposition process, comprising the steps of depositing a silicon dioxide layer on the wafer surface, performing the nitride deposition process on the wafer to deposit silicon nitride or silicon oxinitride on the wafer surface until a predetermined layer thickness is reached, and etching the silicon nitride or silicon oxinitride layer selectively with respect to the silicon dioxide layer.

公开(公告)号：DE60104395D1

公开(公告)日：2004-08-26

申请号：DE60104395

申请日：2001-04-19

Applicant: INFINEON TECHNOLOGIES SC300 ,  INFINEON TECHNOLOGIES AG ,  MOTOROLA INC

Inventor： BREEDEN TERRY ,  TUCKER MIKE ,  OTTOW STEFAN ,  KOESTLER WOLFRAM ,  WISSEL DAN

IPC: H01L21/00 ,  H01L21/302 ,  H01L21/31 ,  H01L21/311 ,  H01L21/314 ,  H01L21/318 ,  H01L21/461 ,  H01L21/469

Abstract: The present invention relates to a recycling procedure for 300 mm nitride dummies which have been previously provided with a special stabilization layer made of silicon dioxide. The recycling procedure is essentially based on selectively wet etching the deposited silicon nitride with respect to the silicon dioxide stabilization layer, preferably with hot phosphoric acid at 160 DEG C. In particular, the present invention provides a method of handling a silicon wafer which is employed as a dummy wafer during a nitride deposition process, comprising the steps of depositing a silicon dioxide layer on the wafer surface, performing the nitride deposition process on the wafer to deposit silicon nitride or silicon oxinitride on the wafer surface until a predetermined layer thickness is reached, and etching the silicon nitride or silicon oxinitride layer selectively with respect to the silicon dioxide layer.

公开(公告)号：DE59906526D1

公开(公告)日：2003-09-11

申请号：DE59906526

申请日：1999-05-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LEHMANN VOLKER ,  REISINGER HANS ,  WENDT HERMANN ,  STENGL REINHARD ,  LANGE GERRIT ,  OTTOW STEFAN

IPC: C25F3/12 ,  C25F3/02 ,  H01P1/20

Abstract: A substrate made from silicon has a first region and a second region. Through pores are formed in the first region. Pores that do not traverse the substrate are provided in the second region. The production of the work piece is performed with the aid of electrochemical etching of the pores. The entire surface of the substrate is covered with a mask layer that is structured photolithographically on the rear of the substrate. The bottoms of the pores in the second region are etched clear, preferably using KOH.