公开(公告)号：DE59914245D1

公开(公告)日：2007-04-19

申请号：DE59914245

申请日：1999-05-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： REISINGER HANS ,  LEHMANN VOLKER ,  STENGL REINHARD ,  WENDT HERMANN ,  LANGE GERRIT ,  BACHHOFER HARALD ,  FRANOSCH MARTIN ,  SCHAEFER HERBERT

IPC: H01L21/8242 ,  H01L27/108

Abstract: A storage capacitor for a DRAM has a dielectric composed of silicon nitride and has at least two electrodes disposed opposite one another across the dielectric. A material having a high tunneling barrier between the Fermi level of the material and the conduction band of the dielectric is used for the electrodes. Suitable materials for the electrodes are metals such as platinum, tungsten and iridium or silicides.

公开(公告)号：DE59906526D1

公开(公告)日：2003-09-11

申请号：DE59906526

申请日：1999-05-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LEHMANN VOLKER ,  REISINGER HANS ,  WENDT HERMANN ,  STENGL REINHARD ,  LANGE GERRIT ,  OTTOW STEFAN

IPC: C25F3/12 ,  C25F3/02 ,  H01P1/20

Abstract: A substrate made from silicon has a first region and a second region. Through pores are formed in the first region. Pores that do not traverse the substrate are provided in the second region. The production of the work piece is performed with the aid of electrochemical etching of the pores. The entire surface of the substrate is covered with a mask layer that is structured photolithographically on the rear of the substrate. The bottoms of the pores in the second region are etched clear, preferably using KOH.

公开(公告)号：DE19842704C2

公开(公告)日：2002-03-28

申请号：DE19842704

申请日：1998-09-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LANGE GERRIT ,  SCHLOESSER TILL

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/105 ,  H01L27/108 ,  H01L21/8239

Abstract: Capacitor production in a semiconductor structure involves producing a lower electrode in the form of horizontal spaced lamellae joined together by a support structure. A capacitor is produced in a semiconductor structure on a support by: (a) forming alternate first and second material layers on the support surface, the first material being selectively etchable with respect to the second material; (b) etching the layer sequence to form a layer structure; (c) covering one side wall of the structure with a first auxiliary structure which is selectively etchable with respect to the second material; (d) covering another side wall of the structure with a second auxiliary structure which mechanically connects the second material layers; (e) applying a filler layer to cover the surrounding support surface up to the upper edge of the layer structure; (f) selectively removing the first material layers and the first auxiliary structure; (g) filling the resulting spaces with a precious metal electrode material to form a first electrode in the form of lamellae (9L) connected by a support structure (9S); (h) selectively removing the second material layers and the second auxiliary structure; (i) applying a conformal capacitor dielectric (10) of high epsilon dielectric or ferroelectric material onto the exposed first electrode surfaces; and (j) producing a second electrode (11) on the capacitor dielectric. An Independent claim is also included for a capacitor produced by the above process.