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    CHEMICALLY AMPLIFIED SHORT WAVELENGTH RESIST
    1.
    发明申请
    CHEMICALLY AMPLIFIED SHORT WAVELENGTH RESIST 审中-公开
    化学放大的短波长电阻

    公开(公告)号：WO0155789A2

    公开(公告)日：2001-08-02

    申请号：PCT/EP0100824

    申请日：2001-01-25

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： DOMKE WOLF-DIETER ,  HIEN STEFAN ,  RICHTER ERNST ,  SEBALD MICHAEL

    IPC: G03F7/004 ,  G03F7/039 ,  G03F7/00

    CPC classification number: G03F7/039 ,  G03F7/0045

    Abstract: A resist capable of imaging by exposure to radiation having a wave length of about 157 nm includes an imagewise convertible film-forming polymer substituted with at least one chemical functional deblocking group cleavable under acid-catalyzed baking conditions to form polar groups imparting solubility of the deblocked polymer in aqueous alkaline developer. At least one photo acid generator compound releases an acid upon exposure to radiation and catalyzes the cleavage of the deblocking groups. An effective amount of at least one radical scavenger compound is used to minimize reactions decreasing the solubility of the deblocked polymer in aqueous alkaline developer. At least one solvent is also provided.

    Abstract translation: 能够通过暴露于波长为约157nm的辐射而成像的抗蚀剂包括成像转化成膜聚合物，其被至少一种在酸催化烘烤条件下可切割的化学功能性解封闭基团取代，以形成极性基团，赋予解封的 水性碱性显影剂中的聚合物。 至少一种光酸产生剂化合物在暴露于辐射时释放出酸并催化解封组的裂解。 使用有效量的至少一种自由基清除剂化合物以使减少解封聚合物在含水碱性显影剂中的溶解度的反应最小化。 还提供至少一种溶剂。

    3.
    发明专利
    未知

    公开(公告)号：DE19958967A1

    公开(公告)日：2001-06-13

    申请号：DE19958967

    申请日：1999-12-07

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： ELIAN KLAUS ,  HIEN STEFAN ,  RICHTER ERNST ,  SEBALD MICHAEL

    IPC: G03F7/004 ,  G03F7/039 ,  G03F7/075

    Abstract: The invention relates to a method for producing negative resist structures. According to the inventive method, a chemically reinforced resist is applied to a substrate, is dried, is exposed to light, X-rays, electron beams or ion beams, heated and developed by means of an aqueous-alkaline developer solution. The resist contains the following components: a polymer that is changed in polarity by virtue of an acting acid; a compound releasing an acid by means of a thermal treatment; a photoreactive compound producing a base when said compound is exposed to light, X-rays, electron beams or ion beams; a solvent; optionally one or more additives.

    4.
    发明专利
    未知

    公开(公告)号：DE10120660B4

    公开(公告)日：2006-06-14

    申请号：DE10120660

    申请日：2001-04-27

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： SEBALD MICHAEL ,  RICHTER ERNST

    IPC: G03F7/26 ,  G03F7/004 ,  G03F7/039 ,  G03F7/38

    Abstract: A method for structuring a photoresist layer including preparing a substrate having a photoresist layer which is applied at least in subregions. The photoresist layer includes a film-forming polymer that comprises molecular groups that can be converted into alkali-soluble groups through acid-catalyzed separation reactions, and a photobase generator that releases a base when irradiated with light from a defined wavelength range. The photoresist layer is irradiated in subregions with light from the defined wavelength range. The photoresist layer is brought into contact with an acid over a defined period of time, during which the acid diffuses into the photoresist layer. The photoresist layer is heated to a temperature at which the acid-catalyzed separation reaction takes place and then the photoresist layer is developed. Through the acid treatment, in the developing step a greater steepness and lower degree of roughness of the resist profiles is achieved.

    6.
    发明专利
    未知

    公开(公告)号：DE10120660B8

    公开(公告)日：2006-09-28

    申请号：DE10120660

    申请日：2001-04-27

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： SEBALD MICHAEL ,  RICHTER ERNST

    IPC: G03F7/26 ,  G03F7/004 ,  G03F7/039 ,  G03F7/38

    Abstract: A method for structuring a photoresist layer including preparing a substrate having a photoresist layer which is applied at least in subregions. The photoresist layer includes a film-forming polymer that comprises molecular groups that can be converted into alkali-soluble groups through acid-catalyzed separation reactions, and a photobase generator that releases a base when irradiated with light from a defined wavelength range. The photoresist layer is irradiated in subregions with light from the defined wavelength range. The photoresist layer is brought into contact with an acid over a defined period of time, during which the acid diffuses into the photoresist layer. The photoresist layer is heated to a temperature at which the acid-catalyzed separation reaction takes place and then the photoresist layer is developed. Through the acid treatment, in the developing step a greater steepness and lower degree of roughness of the resist profiles is achieved.

    9.
    发明专利
    未知

    公开(公告)号：DE10120674B4

    公开(公告)日：2005-06-16

    申请号：DE10120674

    申请日：2001-04-27

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： SEBALD MICHAEL ,  RICHTER ERNST

    IPC: G03F7/004 ,  G03F7/039 ,  G03F7/20 ,  G03F7/38 ,  G03F7/26

    Abstract: A method for structuring a photoresist layer is described. A substrate has a photoresist layer containing a film-forming polymer that has a photo acid generator that liberates an acid on exposure to light from a defined wavelength range Deltalambda 1 . In addition, the polymer has a photo base generator that liberates a base on exposure to light from a defined wavelength range Deltalambda 2 . The photoresist layer is first exposed in parts to light from the defined wavelength range Deltalambda 1 , the light being chosen so that the photo base generator is substantially inert to the irradiation. The photoresist layer is then exposed to light from the defined wavelength range Deltalambda 2 , the light being chosen so that the photo acid generator is substantially inert to the irradiation. The photoresist layer is then heated at which the cleavage reaction catalyzed by the photolytically produced acid takes place, and finally the photoresist layer is developed.

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