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    RESIST SYSTEM, USE OF A RESIST SYSTEM AND LITHOGRAPHY METHOD FOR THE PRODUCTION OF SEMICONDUCTOR ELEMENTS
    1.
    发明申请
    RESIST SYSTEM, USE OF A RESIST SYSTEM AND LITHOGRAPHY METHOD FOR THE PRODUCTION OF SEMICONDUCTOR ELEMENTS 审中-公开
    抗蚀系统使用抗蚀剂系统和光刻工艺用于生产半导体器件

    公开(公告)号：WO2004031858A3

    公开(公告)日：2004-07-01

    申请号：PCT/DE0303178

    申请日：2003-09-19

    Applicant: INFINEON TECHNOLOGIES AG ,  DOMKE WOLF-DIETER ,  KIRCH OLIVER ,  KRAGLER KARL ,  LOWACK KLAUS

    Inventor： DOMKE WOLF-DIETER ,  KIRCH OLIVER ,  KRAGLER KARL ,  LOWACK KLAUS

    IPC: G03F7/004 ,  G03F7/039 ,  G03F7/20

    CPC classification number: G03F7/2004 ,  G03F7/0045 ,  G03F7/0392

    Abstract: The invention relates to a resist system for lithography methods for the production of semiconductor components at wavelengths of 0.1 -150 nm, characterised by at least one polymer or copolymer comprising at least one acid-labile group. The invention also relates to the use of a resist system and a lithography method, whereby it is possible to obtain high sensitivity, especially in the EUV range, and no limitation of the process window occurs by undesirable cross-linking in the resist system, even at high doses of exposure.

    Abstract translation: 本发明涉及的抗蚀剂系统，用于光刻工艺用于生产半导体器件中的在0.1至150纳米范围内的波长，其特征在于由至少一种聚合物或共聚物具有至少一个酸不稳定基团。 此外，本发明涉及一种使用该抗蚀剂系统和光刻工艺。 这使得有可能特别是在可用的EUV范围内的高灵敏度来提供，在相同的时间，但没有进入工艺窗口的限制，即使在高曝光剂量由不希望的交联在抗蚀剂系统。

    IRRADIATION DEVICE FOR TESTING OBJECTS COATED WITH LIGHT-SENSITIVE PAINT
    2.
    发明申请
    IRRADIATION DEVICE FOR TESTING OBJECTS COATED WITH LIGHT-SENSITIVE PAINT 审中-公开
    设备辐射与光敏涂料中的被覆物品TEST

    公开(公告)号：WO2004036312A2

    公开(公告)日：2004-04-29

    申请号：PCT/DE0303381

    申请日：2003-10-08

    Applicant: INFINEON TECHNOLOGIES AG ,  AIXUV GMBH ,  DOMKE WOLF-DIETER ,  JUSCHKIN LARISSA ,  KRAGLER KARL ,  LEBERT RAINER ,  MEISEN MANFRED

    Inventor： DOMKE WOLF-DIETER ,  JUSCHKIN LARISSA ,  KRAGLER KARL ,  LEBERT RAINER ,  MEISEN MANFRED

    IPC: G01J1/42 ,  G03F7/00 ,  G03F7/20 ,  G21K1/10 ,  G21K5/04

    CPC classification number: G21K5/04 ,  G01J1/044 ,  G01J1/429 ,  G03F7/70558 ,  G21K1/10

    Abstract: The invention concerns an irradiation device for testing objects coated with light-sensitive paint, comprising a EUV radiation source, an optical system for filtering the radiation of the EUV radiation source, a chamber for receiving the object, as well as systems for intersecting the trajectory of the rays on the object. The invention also concerns a method for operating such a device. The invention aims at obtaining as quickly as possible an illumination at least partly simultaneous of several irradiation fields, with different doses, by using an inexpensive laboratory radiation source without resorting to complex optical systems. Therefor, the invention provides a device comprising a simplified and compact optical system, with closable diaphragm apertures located in front of the object to be irradiated and at least one control sensor placed on the trajectory of the rays and enabling the radiation dose to be measured.

    Abstract translation: 本发明涉及涂覆有与EUV辐射源，用于过滤来自EUV辐射源，用于接收所述对象的腔室中的辐射的光学系统的感光涂层的物体进行检测照射的装置的装置，以及用于中断对象上的光束路径中。 此外，本发明涉及一种操作这种设备的方法。 为了允许使用便宜的实验室辐射源和没有复杂的光学系统中，多个与在最短的时间内不同的剂量辐照场的至少部分同时曝光，是具有简化和紧凑的光学系统的装置，在对象前面闭孔被照射和至少一个 提出布置在用于辐射剂量测量光束路径监视探测器。

    CHEMICALLY AMPLIFIED SHORT WAVELENGTH RESIST
    3.
    发明申请
    CHEMICALLY AMPLIFIED SHORT WAVELENGTH RESIST 审中-公开
    化学放大的短波长电阻

    公开(公告)号：WO0155789A2

    公开(公告)日：2001-08-02

    申请号：PCT/EP0100824

    申请日：2001-01-25

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： DOMKE WOLF-DIETER ,  HIEN STEFAN ,  RICHTER ERNST ,  SEBALD MICHAEL

    IPC: G03F7/004 ,  G03F7/039 ,  G03F7/00

    CPC classification number: G03F7/039 ,  G03F7/0045

    Abstract: A resist capable of imaging by exposure to radiation having a wave length of about 157 nm includes an imagewise convertible film-forming polymer substituted with at least one chemical functional deblocking group cleavable under acid-catalyzed baking conditions to form polar groups imparting solubility of the deblocked polymer in aqueous alkaline developer. At least one photo acid generator compound releases an acid upon exposure to radiation and catalyzes the cleavage of the deblocking groups. An effective amount of at least one radical scavenger compound is used to minimize reactions decreasing the solubility of the deblocked polymer in aqueous alkaline developer. At least one solvent is also provided.

    Abstract translation: 能够通过暴露于波长为约157nm的辐射而成像的抗蚀剂包括成像转化成膜聚合物，其被至少一种在酸催化烘烤条件下可切割的化学功能性解封闭基团取代，以形成极性基团，赋予解封的 水性碱性显影剂中的聚合物。 至少一种光酸产生剂化合物在暴露于辐射时释放出酸并催化解封组的裂解。 使用有效量的至少一种自由基清除剂化合物以使减少解封聚合物在含水碱性显影剂中的溶解度的反应最小化。 还提供至少一种溶剂。

    Smoothing the surfaces of a structure, e.g. to make smooth-edged photo-resists in micro-electronics, involves coating with another material, heating to above the glass transition point of the first material and then cooling
    9.
    发明专利
    Smoothing the surfaces of a structure, e.g. to make smooth-edged photo-resists in micro-electronics, involves coating with another material, heating to above the glass transition point of the first material and then cooling 未知

    公开(公告)号：DE102004008782A1

    公开(公告)日：2005-09-15

    申请号：DE102004008782

    申请日：2004-02-23

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： SCHWARZL SIEGFRIED ,  DOMKE WOLF-DIETER

    IPC: B05D3/02 ,  G03F7/00 ,  G03F7/40

    Abstract: A method for smoothing the surface of a structure formed from a first material (10) on a base (14) involves coating with a second material (20), heating to above the glass transition point (Tg) of material (10) and then cooling to below the Tg of material (10). A method (M1) for smoothing the surfaces of a structure of a first material (10) with a predetermined first glass transition point (Tg1) on a supporting base (14) involves (a) at least partly coating the surface of (10) with a second material (20) showing a second glass transition point (Tg2), (b) heating (10) to a predetermined temperature (T1) which is higher than Tg1 and (c) cooling (10) to below Tg1. Independent claims are also included for: (1) a method (M2) for smoothing surfaces as above by (a') at least partly coating (10) with a thin layer of a formable release material (26), (b') applying material (20), (c') heating (10) and (20) to a temperature (T1') which is higher than both Tg1 and Tg2, and (d') cooling (10) and (20) to below Tg1; and (2) a method (M3) for smoothing surfaces as above by (a") coating (10) with (20), (b") heating (20) to a temperature (T1") above Tg2 and (c") cooling to below Tg2.

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