公开(公告)号：DE10310716B4

公开(公告)日：2005-07-28

申请号：DE10310716

申请日：2003-03-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： OFFENBERG DIRK ,  BIEMER JUSTIN ,  BOUISSOU AUDE ,  DOW TIM ,  NOTZ REINER ,  PLAGMANN JOERN ,  RUDNICK WOLFRAM ,  SCHEINBACHER GUENTHER ,  SPINDLER OSWALD ,  WITTMANN REINHARD

IPC: H01L23/544

公开(公告)号：DE10310716A1

公开(公告)日：2004-07-15

申请号：DE10310716

申请日：2003-03-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： OFFENBERG DIRK ,  BIEMER JUSTIN ,  BOUISSOU AUDE ,  DOW TIM ,  NOTZ REINER ,  PLAGMANN JOERN ,  RUDNICK WOLFRAM ,  SCHEINBACHER GUENTHER ,  SPINDLER OSWALD ,  WITTMANN REINHARD

IPC: H01L23/544

Abstract: The method involves forming a first metal layer (3) on a semiconductor wafer surface (2), forming structural elements (4), covering free areas with an insulating layer (6). Further metal layers, structural elements and insulating layers are then formed. A fourth insulating layer (16) is applied directly to the surface of a third insulating layer (13).