公开(公告)号：DE10008617A1

公开(公告)日：2001-09-06

申请号：DE10008617

申请日：2000-02-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WINTERAUER FRANZ ,  HINTERMAIER FRANK ,  HARTNER WALTER ,  SCHWINDLER GUENTHER ,  WEINRICH VOLKER ,  CERVA HANS ,  HOEPFNER JOACHIM

IPC: H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/115 ,  H01L27/11502 ,  H01L27/11507 ,  H01G4/12 ,  H01L41/187 ,  H01L21/8239

Abstract: The invention relates to a method for producing a ferroelectric layer. According to the invention, the application of an outer electrical field facilitates the crystallisation of the material in accordance with a predetermined direction. In this way, it is possible to produce ferroelectric layers whose domains are preferably aligned in such a way that their polarisation vectors are positioned perpendicularly to the electrodes of the storage capacitor in a storage cell. As a result, the overall polarisation vector for the domains runs essentially parallel to the field of the storage capacitor while the storage device is in operation and the polarisation produced has a correspondingly high level of remanence. The level of the signal that can be read out of the storage capacitors is also correspondingly high.