公开(公告)号：DE10032282A1

公开(公告)日：2002-01-24

申请号：DE10032282

申请日：2000-07-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BAUCH LOTHAR ,  LEHR MATTHIAS ,  LEIBERG WOLFGANG ,  SPINLER STEFAN

IPC: G03F7/09 ,  H01L21/311 ,  H01L21/768 ,  G03F7/20

Abstract: Lithographic exposure and structuring comprises preparing a substrate (1); applying an anti-refection layer (4) made up of several layers on the substrate; applying a material layer (2) to be treated on the anti-reflection layer; applying a photoresist layer (3) directly to the material layer; and exposing and structuring the photoresist layer so that the material layer is exposed in pre-determined sections for local selective treatment. An Independent claim is also included for the production of a metallic conducting pathway comprising forming a structured photoresist layer as above; removing the material layer in the exposed sections; optionally carrying out the previous two steps; depositing metallic conducting pathway material in the etched recess; and optionally back-polishing the metallic material. Preferred Features: The anti-refection layer is a SiON layer and the material layer is a SiO2 or nitride layer.