公开(公告)号：DE10000004A1

公开(公告)日：2001-05-17

申请号：DE10000004

申请日：2000-01-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LEIBERG WOLFGANG ,  BAUCH LOTHAR ,  GRANDREMY GREGOIRE ,  STEINBACH ANDREAS ,  BRASE GABRIELA

IPC: H01L21/768 ,  H01L21/283

Abstract: Production of conducting pathways comprises applying a metal layer (1) to a substrate with integrated circuits; applying an insulating layer (2) to the metal layer; producing a TiN layer (3) and subsequently a photoresist layer (5); producing a first resist mask by forming a first hole pattern in the photoresist layer; removing the TiN layer exposed in openings (6) and the insulating layer underneath; removing the photoresist layer and the TiN layer; and depositing metal in the trenches and contact holes. An Independent claim is also included for a process for the production of the conducting pathways. Preferred Features: An anitreflection layer formed by a SION layer (4) is arranged between the photoresist layer and the TiN layer. The TiN layer is applied using a reactive plasma sputtering process.

公开(公告)号：DE102006009460A1

公开(公告)日：2007-09-06

申请号：DE102006009460

申请日：2006-03-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： REINICKE MARCO ,  HENKE AXEL ,  STEINBACH ANDREAS ,  SOBE JOERG ,  BARTH SVEN ,  WEGE STEPHAN

IPC: C23C16/52 ,  C23C14/54 ,  H01L21/00 ,  H01L21/66

Abstract: A process device (1a) comprises a process chamber (10) with outer walls (30), a holder within the chamber for holding a substrate (18) during the process, a radiation source (36) for producing a light beam (50) emitting in the infrared wavelength region, a radiation detector (38) for detecting light from the radiation source reflected onto a surface (25) of the substrate and a control and evaluation unit (43) connected to the detector and/or radiation source to determine the wavelength of an absorption edge which characteristic for the material on the surface of the substrate and to calculate a temperature of the substrate from the determined wavelength. An independent claim is also included for determining a temperature of a substrate during use of the process device.

公开(公告)号：DE102005063259A1

公开(公告)日：2007-07-12

申请号：DE102005063259

申请日：2005-12-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEGE STEPHAN ,  HENKE AXEL ,  SOBE JOERG ,  STEINBACH ANDREAS ,  REINICKE MARCO ,  BARTH SVEN

IPC: G01N21/31 ,  G01J5/58

Abstract: The method involves guiding and receiving an electromagnetic radiation via process gases (30) by a radiation source (210), and measuring spectral absorption properties of a gas component of the process gases in a region of absorption line of the gas component. Temperature of the process gases is determined using the measured spectral absorption properties of the gas component. Wavelength of a radiation source in a wavelength region is tuned in the region of the absorption line. Absorption line width of the absorption line is determined. An independent claim is also included for a measuring device for measuring temperature of a process gas.