公开(公告)号：DE19825612C2

公开(公告)日：2002-10-31

申请号：DE19825612

申请日：1998-06-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KAKOSCHKE RONALD ,  STOKAN REGINA

IPC: H01L21/285 ,  H01L21/768 ,  H01L23/485 ,  H01L23/532 ,  H01L21/8238

Abstract: A semiconductor component has local silicon wiring. A first silicon region and a second silicon region are doped with dopants of opposite conductivity. The second silicon region is arranged at least partially over the first silicon region and is separated from it by an insulation layer. The insulation layer is formed with an opening. A conductive layer is disposed at the opening. The conductive layer is composed of a metal, a metal nitride or a combination thereof and connects the first and the second silicon regions electrically to one another.

公开(公告)号：BR9915241A

公开(公告)日：2001-07-24

申请号：BR9915241

申请日：1999-11-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BRAUN HELGA ,  KAKOSCHKE RONALD ,  STOKAN REGINA ,  PLASA GUNTHER ,  KUX ANDREAS

IPC: H01L23/52 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/8238 ,  H01L23/58 ,  H01L27/092 ,  H01L27/02

Abstract: A method for fabricating a wiring which runs at least piecewise in a substrate. At least one conductive connection runs in the semiconductor substrate and at least one conductive connection runs on the semiconductor substrate being provided. The semiconductor component enables applications in which high security against external manipulations is important.

公开(公告)号：DE59914740D1

公开(公告)日：2008-06-05

申请号：DE59914740

申请日：1999-11-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BRAUN HELGA ,  KAKOSCHKE RONALD ,  STOKAN REGINA ,  PLASA GUNTHER ,  KUX ANDREAS

IPC: H01L23/52 ,  H01L27/02 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/8238 ,  H01L23/58 ,  H01L27/092

Abstract: A method for fabricating a wiring which runs at least piecewise in a substrate. At least one conductive connection runs in the semiconductor substrate and at least one conductive connection runs on the semiconductor substrate being provided. The semiconductor component enables applications in which high security against external manipulations is important.

公开(公告)号：AT393476T

公开(公告)日：2008-05-15

申请号：AT99963216

申请日：1999-11-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BRAUN HELGA ,  KAKOSCHKE RONALD ,  STOKAN REGINA ,  PLASA GUNTHER ,  KUX ANDREAS

IPC: H01L23/52 ,  H01L27/02 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/8238 ,  H01L23/58 ,  H01L27/092

Abstract: A method for fabricating a wiring which runs at least piecewise in a substrate. At least one conductive connection runs in the semiconductor substrate and at least one conductive connection runs on the semiconductor substrate being provided. The semiconductor component enables applications in which high security against external manipulations is important.

公开(公告)号：DE19852072C2

公开(公告)日：2001-10-18

申请号：DE19852072

申请日：1998-11-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BRAUN HELGA ,  KAKOSCHKE RONALD ,  KUX ANDREAS ,  STOKAN REGINA ,  PLASA GUNTHER

IPC: H01L23/52 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/8238 ,  H01L23/58 ,  H01L27/092 ,  H01L21/768 ,  H01L23/535

Abstract: A method for fabricating a wiring which runs at least piecewise in a substrate. At least one conductive connection runs in the semiconductor substrate and at least one conductive connection runs on the semiconductor substrate being provided. The semiconductor component enables applications in which high security against external manipulations is important.