公开(公告)号：DE102006024735A1

公开(公告)日：2007-10-18

申请号：DE102006024735

申请日：2006-05-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MANGER DIRK ,  BOUBEKEUR HOCINE ,  VERHOEVEN MARTIN ,  NAGEL NICOLAS ,  TATRY THOMAS ,  CASPARY DIRK ,  MARKERT MATTHIAS

IPC: G03F7/11 ,  G03F7/09 ,  H01L21/033 ,  H01L21/768

Abstract: A hard mask layer stack for patterning a layer to be patterned includes a carbon layer disposed on top of the layer to be patterned, a first layer of a material selected from the group of SiO2 and SiON disposed on top of the carbon layer and a silicon layer disposed on top of the first layer. A method of patterning a layer to be patterned includes providing the above described hard mask layer stack on the layer to be patterned and patterning the silicon hard mask layer in accordance with a pattern to be formed in the layer that has to be patterned.