公开(公告)号：JP2004042253A

公开(公告)日：2004-02-12

申请号：JP2003113542

申请日：2003-04-18

Applicant: Infineon Technologies Ag ,  インフィネオン テクノロジーズ アクチエンゲゼルシャフト

Inventor： LIEBAU MAIK ,  UNGER EUGEN ,  DUESBERG GEORG

IPC: B82B3/00 ,  B05D3/02 ,  B05D5/00 ,  B32B9/00 ,  C01B31/02 ,  H01L21/288 ,  H01L21/768 ,  H01L29/06 ,  H01L29/15

CPC classification number: H01L21/288 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/76838 ,  H01L2221/1094 ,  Y10S977/843 ,  Y10S977/857 ,  Y10T428/24132 ,  Y10T428/24744 ,  Y10T428/30

Abstract: PROBLEM TO BE SOLVED: To provide a method for depositing a carbon nanotube on a flat surface according to a target. SOLUTION: Vapor deposition of the nanotube is performed by using a capillary of a range not more than a micrometer or a nanometer. A ram having a relief structure composed of an elastomer material is contacted with the flat surface. When liquid of a nanotube dispersing liquid is dripped on a certain surface, this liquid diffuses by receiving capillary force. Mobility of the nanotube in the capillary is determined by the size and an individual capillary shape, and a surface state has influence on the mobility of the nanotube. COPYRIGHT: (C)2004,JPO

公开(公告)号：DE102004046258A1

公开(公告)日：2006-04-06

申请号：DE102004046258

申请日：2004-09-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： UNGER EUGEN

IPC: C23C18/44

Abstract: Bath for the electroless deposition of palladium is based on an aqueous solution containing 0.01-0.5 mol/l divalent palladium compound, 0.04-2 mol/l base selected from ammonia, primary alkyl amines with up to five carbon atoms, ethanolamine, ethylene diamine and N-methylated ethylene diamine and 1-15 mol/l ammonium formate as reducing agent. An independent claim is also included for: a process for the electroless deposition of palladium using the above bath.

公开(公告)号：DE19927286A1

公开(公告)日：2001-01-18

申请号：DE19927286

申请日：1999-06-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BEITEL GERHARD ,  SAENGER ANNETTE ,  UNGER EUGEN

IPC: B24B37/04 ,  C09G1/02 ,  C09K3/14 ,  C23F3/00 ,  H01L21/321

Abstract: An abrasive slurry for a chemical mechanical polishing of a precious-metal surface includes abrasive particles, which are in organic and/or aqueous suspension, an oxidizing agent and a complex-forming agent which shifts the equilibrium between the precious metal in elemental form and its ions in solution toward the formation of new ions. A chemical-mechanical polishing method is also provided.

公开(公告)号：DE102006010512A1

公开(公告)日：2007-06-21

申请号：DE102006010512

申请日：2006-03-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DUESBERG GEORG ,  KREUPL FRANZ ,  LIEBAU MAIK ,  UNGER EUGEN

IPC: C23C16/26 ,  C23C16/02

Abstract: One embodiment of the present invention provides a method for the deposition of a Carbon containing layer on a Silicon surface wherein a (i) substantially Silicon-oxide-free or reduced oxide interface results between Silicon and the Carbon containing layer during the deposition. In another embodiment, the present invention provides a method for deposition of a Carbon containing layer wherein the deposition process is substantially soot (particle)-free or reduction of soot.

公开(公告)号：DE102005058466A1

公开(公告)日：2007-06-14

申请号：DE102005058466

申请日：2005-12-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER WALTER MICHAEL ,  UNGER EUGEN ,  KREUPL FRANZ

IPC: H01L21/335 ,  H01L29/772

Abstract: The method involves forming a semiconductor channel structure with at least one first contact region (30) and a second contact region (32) and at least one channel region connecting the two contact regions along the channel path. A first diffusion reservoir (34) is arranged on the first contact region. Diffusion material is diffused from the first diffusion reservoir into the channel region, such that a first electrically conductive contact lead-out (40) is formed, having a length that is shorter than the length of the channel path. An independent claim is included for a semiconductor device.

公开(公告)号：DE10113551C2

公开(公告)日：2003-02-27

申请号：DE10113551

申请日：2001-03-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： UNGER EUGEN

IPC: C01B31/02 ,  C30B33/00 ,  B82B3/00

公开(公告)号：DE10113551A1

公开(公告)日：2002-10-02

申请号：DE10113551

申请日：2001-03-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： UNGER EUGEN

IPC: C01B31/02 ,  C30B33/00 ,  B82B3/00

Abstract: Production of nanotubes comprises: contacting nanotubes connected as anode (104) with a halide salt solution in contact with a cathode (106); and passing an electrical current through the solution via the anode and cathode to induce an oxidative reaction on the tubes. Preferred Features: The anode and the cathode form parts of an electrochemical cell (100) having a salt bridge (101) with an anode side and a cathode side. The electrolyte used is a chloride or bromide. A current density of maximum 10 mA/cm is used.

公开(公告)号：DE10043891A1

公开(公告)日：2002-04-04

申请号：DE10043891

申请日：2000-09-06

Applicant: INFINEON TECHNOLOGIES AG

Inventor： UNGER EUGEN

IPC: C01B31/02 ,  D01F9/127 ,  B82B3/00 ,  D01F9/12

Abstract: Production of carbon (C) nanotubes from compounds (I) containing C uses organo-transition metal compound(s) (II) containing (alkyl)cyclopentadienyl and/or carbonyl groups. Production of carbon (C) nanotubes from compounds (I) containing C uses organo-transition metal compound(s) of formula ((Cp)xMn(CO)y)z (II) containing (alkyl)cyclopentadienyl and/or carbonyl groups. Cp = cyclopentadienyl or alkylcyclopentadienyl group; M = transition metal; n = 1, 2 or 3; x = 0, 1 or 2; y = 0-8; z = 1 or 2.

公开(公告)号：DE10035365A1

公开(公告)日：2002-02-07

申请号：DE10035365

申请日：2000-07-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： UNGER EUGEN

IPC: H01L51/00 ,  H01L51/30 ,  H01L51/42 ,  B82B3/00 ,  H01L51/20

Abstract: Production of a photosensitive nanotube comprises deriving the tube by producing chemically reactive groups; and coupling a dye excited by light on the tube via the chemically reactive groups. An Independent claim is also included for the process for closing off the existence of light by measuring the electrical properties of a nanotube bound with a dye.

公开(公告)号：DE102006007331A1

公开(公告)日：2007-08-23

申请号：DE102006007331

申请日：2006-02-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHINDLER GUENTHER ,  UNGER EUGEN ,  HOENLEIN WOLFGANG

IPC: H01L27/08 ,  H01L21/768 ,  H01L21/822 ,  H01L23/522

Abstract: The arrangement has a metallization layer arranged over a substrate, where the metallization layer exhibits strip conductors for connecting electronic components. An electrically conductive layer is arranged over the metallization layer, where a dielectric layer (6) is arranged on or over the electrically conductive layer. Another electrically conductive layer is arranged on or over the dielectric layer, where a protection and insulation layer (8) is arranged on or over the latter electrically conductive layer. A third electrically conductive layer is arranged on or over the insulation layer. An independent claim is also included for a method for manufacturing a multilayer capacitance arrangement.