公开(公告)号：DE10127580A1

公开(公告)日：2002-12-05

申请号：DE10127580

申请日：2001-05-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BAUMEISTER HORST ,  GESSNER ROLAND ,  VEUHOFF EBERHARD ,  WENGER GUNDOLF

IPC: H01L21/033 ,  H01L21/28 ,  H01L21/302 ,  H01L21/308 ,  H01L21/3205 ,  H01L21/461 ,  H01S5/20 ,  H01S5/323

Abstract: The invention relates to a masking technique for producing a structure for semiconductor components, in particular BH laser diodes, according to which mask material is applied to a sample in a masking step. The technique is characterised in that the etching rate during an etching step (3) is selected in accordance with the composition and/or the nature of the mask material, so that the mask (40) is at least partially dissolved during the etching step (3). This enables the mask to be removed from the semiconductor material and additional layers to be applied in-situ in a simple manner during the production of semiconductor components.

公开(公告)号：DE10127580B4

公开(公告)日：2006-04-27

申请号：DE10127580

申请日：2001-05-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BAUMEISTER HORST ,  GESSNER ROLAND ,  VEUHOFF EBERHARD ,  WENGER GUNDOLF

IPC: H01L21/308 ,  H01L21/033 ,  H01L21/28 ,  H01L21/302 ,  H01L21/3205 ,  H01L21/461 ,  H01S5/20 ,  H01S5/323

Abstract: A method produces structures for semiconductor components, particularly BH laser diodes, in which a mask material is applied to a sample in a masking step. The etch rate in an etching step depends upon the composition and/or nature of the mask material. The etch rate is selected in such a way so that the mask is at least partly dissolved during the etching step. It is therefore possible to easily remove the mask from the semiconductor material and apply additional layers in situ during the fabrication of semiconductor components.

公开(公告)号：DE10132231A1

公开(公告)日：2003-01-16

申请号：DE10132231

申请日：2001-06-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BAUMEISTER HORST ,  GESSNER ROLAND ,  VEUHOFF EBERHARD ,  WENGER GUNDOLF

IPC: H01S5/12 ,  H01S5/20 ,  H01S5/125

Abstract: The invention relates to a method for fabricating a structure in a semiconductor material. At least one etching step is carried out in-situ in an epitaxy installation and tertiary butyl chloride is used as the etchant. The at least one etching step produces at least one grating structure of a DFB laser. This provides an efficient method for fabricating DFB lasers.

公开(公告)号：DE10132231C2

公开(公告)日：2003-08-14

申请号：DE10132231

申请日：2001-06-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BAUMEISTER HORST ,  GESSNER ROLAND ,  VEUHOFF EBERHARD ,  WENGER GUNDOLF

IPC: H01S5/12 ,  H01S5/20

Abstract: The invention relates to a method for fabricating a structure in a semiconductor material. At least one etching step is carried out in-situ in an epitaxy installation and tertiary butyl chloride is used as the etchant. The at least one etching step produces at least one grating structure of a DFB laser. This provides an efficient method for fabricating DFB lasers.

公开(公告)号：DE10152088A1

公开(公告)日：2003-11-06

申请号：DE10152088

申请日：2001-10-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FRANZ GUENTHER ,  GAUER DOROTHEA ,  VEUHOFF EBERHARD ,  ZWICKNAGL PETER ,  BAUMEISTER HORST

IPC: H01L21/331 ,  H01L29/20 ,  H01L29/737

Abstract: Production of a bipolar transistor comprises preparing a substrate (100) having a layer sequence consisting of a sub-collector layer (108, 110), a sub-collector etch-stop layer (112), a collector layer and a base layer, etching the layer sequence to expose a section of the etch stop layer, forming an emitter layer, and forming an emitter contact, a collector contact (134, 136) and a base contact.