公开(公告)号：DE10152089A1

公开(公告)日：2003-05-08

申请号：DE10152089

申请日：2001-10-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FRANZ GUENTHER ,  GAUER DOROTHEA ,  PLAGMANN JOERN

IPC: H01L21/331 ,  H01L29/08 ,  H01L29/737 ,  H01L21/335

Abstract: Production of a semiconductor structure comprises preparing a substrate (100) having a layer sequence; structuring the layer sequence to expose the layers of the structure to be contacted; and planarizing the topology produced. Preferred Features: A planarizing layer (132) is formed on the topology produced. The planarizing layer is a spin-on-glass layer. The planarizing layer is cured by tempering or by electron beam treatment. The layer sequence is structured by etching, preferably wet chemical etching and/or plasma etching.

公开(公告)号：DE10152088A1

公开(公告)日：2003-11-06

申请号：DE10152088

申请日：2001-10-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FRANZ GUENTHER ,  GAUER DOROTHEA ,  VEUHOFF EBERHARD ,  ZWICKNAGL PETER ,  BAUMEISTER HORST

IPC: H01L21/331 ,  H01L29/20 ,  H01L29/737

Abstract: Production of a bipolar transistor comprises preparing a substrate (100) having a layer sequence consisting of a sub-collector layer (108, 110), a sub-collector etch-stop layer (112), a collector layer and a base layer, etching the layer sequence to expose a section of the etch stop layer, forming an emitter layer, and forming an emitter contact, a collector contact (134, 136) and a base contact.