公开(公告)号：DE10240405A1

公开(公告)日：2003-05-28

申请号：DE10240405

申请日：2002-09-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TOBBEN DIRK ,  BRINTZINGER AXEL ,  WEBER STEFAN

IPC: H01L23/525 ,  H01L21/768 ,  H01L21/8242

Abstract: An antifuse (e.g., 130) is formed in an integrated circuit through the use of a block mask (e.g., photoresist 120) during in situ antifuse dielectric formation. Generally, the mask allows self-aligned oxidation of an oxidizable metal (e.g., aluminum 104) to form the antifuse dielectric (e.g., aluminum oxide 124), while preventing oxidation of non-programmable or fixed connections (e.g., conductive stack 128). The number of mask, deposition, or etching steps may be reduced relative to prior art methods. In addition, a fixed connection may be formed during the formation of and at the same level as the antifuse link.

公开(公告)号：DE59802788D1

公开(公告)日：2002-02-28

申请号：DE59802788

申请日：1998-09-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FENK JOSEF ,  WEBER STEFAN ,  KOLB BERND ,  ZANNOTH MARKUS

IPC: H03B5/12