公开(公告)号：DE10038125A1

公开(公告)日：2002-03-07

申请号：DE10038125

申请日：2000-08-04

Applicant: INFINEON TECHNOLOGIES AG

Inventor： UNGER EUGEN DR ,  WEBER WERNER DR

IPC: C08G61/12 ,  H01B1/12 ,  C08J7/12

Abstract: Method for binding a nanotube (I) to a polymer (II) comprises derivatizing an end of (I) with a chemically reactive group and reacting this with (II) so as to form a covalent bond between (I) and (II). Independent claims are also included for the following: (a) polymer to which a (I) is covalently bonded; and (b) microelectronic component that includes the polymer of (a).

公开(公告)号：DE59810754D1

公开(公告)日：2004-03-18

申请号：DE59810754

申请日：1998-12-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER WERNER DR ,  WOHLRAB ERDMUTE

IPC: G11C16/02 ,  G11C16/06 ,  G11C16/10 ,  G11C16/26

Abstract: The EPROM has a device (M1,M2,M3) for evaluating and regulating the voltage (V) of the bit line (BL). A memory cell (Z) is provided. This has a transistor with a floating gate. The control gate is connected to the word line (WL). The drain terminal is connected to the bit line and the source terminal is connected to the reference potential (GND). The bit line can be connected via a p-channel first MOS transistor (M1) to a bit line supply voltage (VBL). The gate (CH) of the first transistor (M1) can be connected via a p-channel second MOS transistor (M2) with the bit line supply voltage (VBL) and via an n-channel third MOS transistor (M3) to the reference potential. The bit line is connected to the gate of the second p-channel MOS transistor. The gate of the third transistor is connected to the input for a pulse type voltage (PHI). The method for programming the EPROM involves using the pulsed voltage and the third and first transistors to cause the bit line to be connected to the bit-line supply voltage. A pulse train with negative and positive pulses is then applied to the word line. During the negative pulse, the memory cells are programmed. During the positive pulse, it is checked whether a desired threshold voltage of the transistor of that cell has been reached. If so, the memory cell is conductive and the voltage at the bit line is reduced. The p-channel MOS transistor is closed. The bit line is then decoupled from the supply voltage and the cell is discharged to the reference potential.

公开(公告)号：DE102007012335B4

公开(公告)日：2013-10-31

申请号：DE102007012335

申请日：2007-03-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： THEUSS HORST DR ,  HERNDL THOMAS ,  WEBER WERNER DR ,  WEITZEL JOACHIM ,  AUBURGER ALBERT

IPC: G01D11/24 ,  B60C23/04 ,  G01D11/30 ,  H01L23/28 ,  H05K7/00

Abstract: Vorrichtung zum Erfassen einer Messgröße, umfassend: einen Sensorchip (170), um die Messgröße zu erfassen; eine Versorgungseinrichtung (180), um eine Energieversorgung bereitzustellen; und ein Spritzgussgehäuse (100, 100') zur Aufnahme des Sensorchips (170) und der Versorgungseinrichtung (180), wobei das Spritzgussgehäuse (100, 100') integrierte Leiterbahnen (160a, 160b, 160c) aufweist, die eine elektrische Verbindung zwischen dem Sensorchip (170) und der Versorgungseinrichtung (180) bereitstellen, wobei das Spritzgussgehäuse (100, 100') zumindest zwei Komponenten aufweist, die sich hinsichtlich ihrer Dielektrizitätskonstante und/oder hinsichtlich ihres Verlustfaktors um zumindest 50% voneinander unterscheiden.