公开(公告)号：JP2003152066A

公开(公告)日：2003-05-23

申请号：JP2002326083

申请日：2002-11-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WINTER SYLVIA ,  MIMIETZ STEFFEN

IPC: H01L21/673 ,  H01L21/68 ,  H01L21/683

Abstract: PROBLEM TO BE SOLVED: To provide a wafer operating device which can operate a wafer having a functional surface, and a method for working the wafer having the functional surface. SOLUTION: This wafer operating device is a wafer operating device containing a retaining part position (1) and provided with a retaining surface (2), which can be brought into contact with a surface of a wafer (4) in order to work the wafer (4) and is provided with at least one negative pressure region (3). The negative pressure region is formed as a trench in the retaining surface (2). Negative pressure can be formed in the negative pressure region when the negative pressure region is brought into contact with the wafer (4).

公开(公告)号：JP2004006635A

公开(公告)日：2004-01-08

申请号：JP2003011776

申请日：2003-01-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： VASQUEZ BARBARA ,  WALLIS DAVID ,  WINTER SYLVIA

IPC: H01L21/301 ,  H01L21/304 ,  H01L21/68 ,  H01L21/78

Abstract: PROBLEM TO BE SOLVED: To provide the rear processing method of a wafer to form a trench on the front surface of a wafer by sawing or etching, to grind the wafer from the base side, to fill the trench with protective materials, to coat the base front surface as the surface layer, and to harden it. SOLUTION: In this method, a trench is formed on the front surface of wafer 1 by sawing or etching, the wafer 1 is ground from the base side, the trench is filled with protective materials 8, which is also applied to the base surface as the surface layer. Then, the protective materials 8 are hardened in order to carry out the sawing process. In another embodiment of this method, double thin film layers are formed on the rear face of the wafer 1 including a mounting tape 6 and a protective layer 8 faced to the rear face of the wafer 1. COPYRIGHT: (C)2004,JPO

公开(公告)号：DE10215083C1

公开(公告)日：2003-12-04

申请号：DE10215083

申请日：2002-04-05

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WINTER SYLVIA

IPC: H01L21/301 ,  H01L21/68 ,  H01L21/78 ,  H01L21/50

Abstract: The method has a semiconductor wafer sawed along defined lines via a saw foil (8), for separation into individual semiconductor chips (5), released via a transport rod (11) pushed through the saw foil into contact with the semiconductor chip, which is transferred to a transport band (13,14) on the opposite side.

公开(公告)号：DE10342981A1

公开(公告)日：2005-04-21

申请号：DE10342981

申请日：2003-09-17

Applicant: DISCO HI TEC EUROP GMBH ,  INFINEON TECHNOLOGIES AG

Inventor： PRIEWASSER KARL HEINZ ,  WINTER SYLVIA

IPC: H01L21/66 ,  H01L21/68 ,  H01L21/78 ,  H01L23/544

Abstract: The partial processing device has the active side of the semiconductor wafer (1) laminated with an adhesive foil (2), with application of an adhesive stripping foil (3) to the adhesive foil via a lamination device, before removal of the stripping foil together with defined regions of the adhesive foil via a separation device. An independent claim for a method for selective application of a foil to a defined region of a semiconductor wafer is also included.

公开(公告)号：DE102004058456A1

公开(公告)日：2006-06-08

申请号：DE102004058456

申请日：2004-12-03

Applicant: DISCO HI TEC EUROP GMBH ,  INFINEON TECHNOLOGIES AG

Inventor： WINTER SYLVIA ,  PEKIJA DEJAN

IPC: H01L21/67

Abstract: The method involves applying a tape, backing film (3) and an adhesive film (4) sequentially on a thinly ground wafer (1). The wafer (1) and the films are heated upto a temperature within a range between a room temperature and a fusing temperature of the tape, for compensation of geometrical deformation of the wafer. The heating takes place with the help of a heating device and is regulated as a function of deformation of the wafer.

公开(公告)号：DE10342768A1

公开(公告)日：2005-04-21

申请号：DE10342768

申请日：2003-09-16

Applicant: DISCO HI TEC EUROP GMBH ,  INFINEON TECHNOLOGIES AG

Inventor： PRIEWASSER KARL-HEINZ ,  WINTER SYLVIA

IPC: H01L25/065 ,  H01L29/06 ,  H01L21/58 ,  H01F10/00

Abstract: The semiconductor chip has a base body (1) provided with an active side (2) and a rear side having an integral spacer element (3), which is set inwards from the peripheral edge (4) of the semiconductor chip. An independent claim for a manufacturing method for semiconductor chips is also included.

公开(公告)号：DE10155255A1

公开(公告)日：2003-05-28

申请号：DE10155255

申请日：2001-11-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WINTER SYLVIA ,  MIMIETZ STEFFEN

IPC: H01L21/673 ,  H01L21/68 ,  H01L21/683

Abstract: The processing device has a support surface (2) on which a semiconductor wafer (4) that is to be processed is placed. The support surface has a negative pressure area (3) in the form of grooves such that negative pressure is developed, when the negative pressure area comes in contact with the wafer. An Independent claim is also included for semiconductor wafer processing method.

公开(公告)号：DE102011054153A1

公开(公告)日：2012-04-05

申请号：DE102011054153

申请日：2011-10-04

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WINTER SYLVIA

IPC: H01L23/544 ,  H01L21/822

Abstract: Es wird ein Wafer offenbart. Der Wafer umfasst mehrere Chips (230, 240, 250, 260) und mehrere Schnittgräben (320, 330). Ein Schnittgraben (320) der mehreren Schnittgräben (320, 330) trennt einen Chip (230, 240) von einem anderen Chip (250, 260). Der Schnittgraben (320) weist eine Rissstoppbarriere (610) auf.

公开(公告)号：DE10342981B4

公开(公告)日：2007-05-24

申请号：DE10342981

申请日：2003-09-17

Applicant: DISCO HI TEC EUROP GMBH ,  INFINEON TECHNOLOGIES AG

Inventor： PRIEWASSER KARL HEINZ ,  WINTER SYLVIA

IPC: H01L21/78 ,  H01L21/66 ,  H01L21/68 ,  H01L23/544

公开(公告)号：DE102005042769A1

公开(公告)日：2007-03-15

申请号：DE102005042769

申请日：2005-09-08

Applicant: DISCO HI TECH EUROP GMBH ,  INFINEON TECHNOLOGIES AG

Inventor： WINTER SYLVIA ,  PRIEWASSER KARL HEINZ ,  KOENIG ANDREAS ,  PEKIJA DEJAN

IPC: H01L21/67

Abstract: Method for correcting the shape of a thinly polished wafer (1) comprises coating the water with a liquid after polishing, drying, hardening and applying tensile stress to the wafer by contraction. An independent claim is also included for a device for correcting the shape of a wafer comprising a nozzle (2) for applying the liquid and a heater and/or dryer (3).