公开(公告)号：JP2003152066A

公开(公告)日：2003-05-23

申请号：JP2002326083

申请日：2002-11-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WINTER SYLVIA ,  MIMIETZ STEFFEN

IPC: H01L21/673 ,  H01L21/68 ,  H01L21/683

Abstract: PROBLEM TO BE SOLVED: To provide a wafer operating device which can operate a wafer having a functional surface, and a method for working the wafer having the functional surface. SOLUTION: This wafer operating device is a wafer operating device containing a retaining part position (1) and provided with a retaining surface (2), which can be brought into contact with a surface of a wafer (4) in order to work the wafer (4) and is provided with at least one negative pressure region (3). The negative pressure region is formed as a trench in the retaining surface (2). Negative pressure can be formed in the negative pressure region when the negative pressure region is brought into contact with the wafer (4).

公开(公告)号：DE10137113A1

公开(公告)日：2003-02-27

申请号：DE10137113

申请日：2001-07-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KRAEMER HANS ,  GEIDL JOCHEN ,  HERRLICH LUTZ ,  GOEHLER JENS ,  MIMIETZ STEFFEN ,  GROBITZSCH ELISABETH ,  PATAKI ANETT

IPC: H01L21/302

Abstract: Regenerating semiconductor wafers mostly made from silicon comprises determining the extent of damage on the main surfaces of the wafer; grinding and chemical-mechanical polishing the surfaces; and wet chemical cleaning. Preferred Features: The grinding is carried out in the wet state using a diamond abrasive disk. Polishing is carried out in the presence of a polishing solution made from 0.26-normal tetramethylammonium hydroxide solution, 12 % silicon dioxide solution and 8 % aluminum sulfate solution. The wet chemical cleaning is carried out in the presence of 10-50 % hydrofluoric acid.

公开(公告)号：DE10155255A1

公开(公告)日：2003-05-28

申请号：DE10155255

申请日：2001-11-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WINTER SYLVIA ,  MIMIETZ STEFFEN

IPC: H01L21/673 ,  H01L21/68 ,  H01L21/683

Abstract: The processing device has a support surface (2) on which a semiconductor wafer (4) that is to be processed is placed. The support surface has a negative pressure area (3) in the form of grooves such that negative pressure is developed, when the negative pressure area comes in contact with the wafer. An Independent claim is also included for semiconductor wafer processing method.

公开(公告)号：DE10045202A1

公开(公告)日：2002-04-11

申请号：DE10045202

申请日：2000-09-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BOEHME THOMAS ,  LIEHR STEFAN ,  MIMIETZ STEFFEN

IPC: H01L21/673 ,  B65D85/30 ,  B65D25/02 ,  B65D85/86 ,  H01L21/68