公开(公告)号：DE60103398D1

公开(公告)日：2004-06-24

申请号：DE60103398

申请日：2001-06-20

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： LEE GILL YONG ,  HALLE SCOTT D ,  BEINTNER JOCHEN

IPC: G03F7/09 ,  H01L21/027 ,  H01L21/311 ,  H01L21/314 ,  H01L21/8242

Abstract: In accordance with the present invention, a method for employing and removing inorganic anti-reflection coatings, includes the steps of providing a first dielectric layer on a semiconductor device structure to be processed, the first dielectric layer being selectively removable relative to the semiconductor device structure, and forming an inorganic dielectric anti-reflection coating (DARC) on the first dielectric layer, the DARC being selectively removable relative to the first dielectric layer. A resist layer is patterned on the DARC. The resist is selectively removable relative to the DARC. The semiconductor device structure is etched, and the resist layer, the DARC and the first dielectric layer are selectively removed.

公开(公告)号：DE60103398T2

公开(公告)日：2005-06-09

申请号：DE60103398

申请日：2001-06-20

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： LEE GILL YONG ,  HALLE SCOTT D ,  BEINTNER JOCHEN

IPC: G03F7/09 ,  H01L21/027 ,  H01L21/311 ,  H01L21/314 ,  H01L21/8242

Abstract: In accordance with the present invention, a method for employing and removing inorganic anti-reflection coatings, includes the steps of providing a first dielectric layer on a semiconductor device structure to be processed, the first dielectric layer being selectively removable relative to the semiconductor device structure, and forming an inorganic dielectric anti-reflection coating (DARC) on the first dielectric layer, the DARC being selectively removable relative to the first dielectric layer. A resist layer is patterned on the DARC. The resist is selectively removable relative to the DARC. The semiconductor device structure is etched, and the resist layer, the DARC and the first dielectric layer are selectively removed.

公开(公告)号：EP0794567A3

公开(公告)日：2000-01-12

申请号：EP97102901

申请日：1997-02-21

Applicant: SIEMENS AG ,  IBM

Inventor： HO HERBERT L ,  SRINIVASAN RADHIKA ,  HALLE SCOTT D ,  HAMMERL ERWIN ,  DOBUZINSKY DAVID M ,  MANDELMAN JACK A ,  JASO MARK ANTHONY

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/762 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/70

CPC classification number: H01L27/10861 ,  H01L21/76232 ,  H01L27/10832 ,  H01L28/82 ,  Y10S438/973

Abstract: A simplified method of fabricating a storage node for a deep trench-based DRAM on a semiconductor substrate. The method involves the etching a trench in a surface of the substrate and then forming a layer of dielectric material on a sidewall of the trench the top portion of which is subsequently removed from the sidewall. Next, a layer of oxide is grown on the exposed portion of the sidewall. A portion of this layer of oxide is then removed from the sidewall in order to orient the layer of oxide a predetermined distance from the surface of the substrate. Finally, the trench is filled with a semiconductive material.

公开(公告)号：JPH10242415A

公开(公告)日：1998-09-11

申请号：JP1839798

申请日：1998-01-30

Applicant: IBM

Inventor： HALLE SCOTT D ,  HWANG CHORNGLII ,  MULLER PAUL K

IPC: H01L27/108 ,  H01L21/02 ,  H01L21/8242

Abstract: PROBLEM TO BE SOLVED: To increase the surface area of a side wall without increasing the depth of a trench by using the granular structure of polysilicon with the anisotropic etching and making the trench side wall into a rough face so that it can be controlled. SOLUTION: A trench color 6 is formed by using a thermal oxidation method and oxidized nitride is removed by isotropic etching. The isotropic etching of silicon is executed after the color oxide 6 is formed, and the rough face degree of polysilicon is improved. During etching, amorphous silicon or a polysilicon layer 4 at the lower side of the color 6 is etched into a silicon substrate 2 through the trench side wall. The side wall and the base part of the trench 1, which are at the lower side of the color oxide 6, are provided with a rough face layer as the result of etching. The trench side wall is made into the rough face by means of the granular structure of polysilicon and the preferential etching of granular boundary. Then, the rough face degree can be controlled by using isotropic etching.

公开(公告)号：JP2000205833A

公开(公告)日：2000-07-28

申请号：JP37359999

申请日：1999-12-28

Applicant: IBM ,  SIEMENS AG

Inventor： HALLE SCOTT D ,  MANTZ ULRICH ,  MULLER PAUL K ,  JAIPRAKASH VENKATACHALAM C

IPC: G01B11/22 ,  G03F7/20

Abstract: PROBLEM TO BE SOLVED: To implement a practical non-destructive method for determining the depth of a recessed conductor in a trench by irradiating a substrate by an infrared light source, subjecting a reflected return signal to Fourier transformation to detect spectral contents, and correlating the spectral contents of the return signal with a logical sample spectrum. SOLUTION: In a Fourier transformation infrared(FTIR) system, controlled infrared spectrum are radiated, and the spectral contents of a return signal are detected and analyzed with Fourier analysis. A global infrared light source 20 is, for example, provided for radiating wide-band infrared energy. An interferometer is arranged in a path from the infrared light source 20 to a sample 22, comprises a movable mirror 24, a fixed mirror 26, and a beam splitter 21, and generates interference patterns which strengthen each other and interference patterns which weaken each other in a detector 25 through the use of the movable mirror 24. Then a return signal to the detector 25 from mirrors 26 and 27 is subjected to Fourier transformation, and the spectral contents of the detected return signal are correlated with a logical sample spectrum.

公开(公告)号：WO0199164A3

公开(公告)日：2002-07-25

申请号：PCT/US0119660

申请日：2001-06-20

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： LEE GILL YONG ,  HALLE SCOTT D ,  BEINTNER JOCHEN

IPC: G03F7/09 ,  H01L21/027 ,  H01L21/311 ,  H01L21/314 ,  H01L21/8242 ,  H01L21/033 ,  H01L21/32

CPC classification number: H01L21/0276 ,  G03F7/091 ,  H01L21/31116 ,  H01L21/31133 ,  H01L21/3145 ,  H01L27/10861

Abstract: In accordance with the present invention, a method for employing and removing inorganic anti-reflection coatings, includes the steps of providing a first dielectric layer (122) on a semiconductor device (110) structure to be processed, the first dielectric layer being selectively removable relative to the semiconductor device structure, and forming an inorganic dielectric anti-reflection coating (DARC) (124) on the first dielectric layer, the DARC being selectively removable relative to the first dielectric layer. A resist layer (130) is patterned on the DARC. The resist is selectively removable relative to the DARC. The semiconductor device structure is etched, and the resist layer, the DARC and the first dielectric layer are selectively removed.

Abstract translation: 根据本发明，一种采用和去除无机抗反射涂层的方法包括以下步骤：在要加工的半导体器件（110）结构上提供第一介电层（122），所述第一介电层可选择性地可移除 相对于半导体器件结构，以及在第一电介质层上形成无机介电抗反射涂层（DARC）（124），所述DARC可相对于第一介电层选择性地去除。 抗蚀剂层（130）在DARC上被图案化。 抗蚀剂相对于DARC有选择性地可去除。 蚀刻半导体器件结构，并且选择性地去除抗蚀剂层，DARC和第一介电层。