公开(公告)号：DE10331195B4

公开(公告)日：2006-12-28

申请号：DE10331195

申请日：2003-07-10

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： DOBUZINSKY DAVID M ,  FALTERMEIER JOHNATHAN ,  FLAITZ PHILIP ,  IWATAKE MICHAEL M ,  MALDEI MICHAEL ,  NINOMIYA LISA Y ,  RAMACHARDRAN RAVIKUMAR ,  SARDESAI VIRAI Y ,  SNAVELY COLLEEN M ,  WANG YUN YU

IPC: H01L21/8242 ,  H01L21/20 ,  H01L21/285 ,  H01L21/306

Abstract: In a method of preparing a DRAM wherein doped poly-Si is used as a CB contact as well as a source of doping in the contact region, and where in amorphous Si is used to fill the CB contact, the improvement of enhancing epitaxial regrowth in amorphous Poly CB contacts, comprising: a) affecting a CB liner reactive ion etch on a substrate to remove SiN and SiO; b) affecting an O plasma clean (in-situ or ex-situ); c) affecting a Huang AB clean; d) affecting a dilute hydrofluoric acid (DHF) clean; e) depositing amorphous Si; and f) annealing to recrystallize and regrow amorphous CB.

公开(公告)号：DE10330459A1

公开(公告)日：2004-02-26

申请号：DE10330459

申请日：2003-07-05

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： DZIOBKOWSKI CHESTER ,  GOEBEL THOMAS ,  HUGHES BRIAN ,  IGGULDEN ROY C ,  IWATAKE MICHAEL M ,  MIURA DONNA D ,  ROBL WERNER ,  SHAFER PADRAIC ,  WONG KWONG HON ,  STRANE JAY W

IPC: H01L21/3205 ,  H01L21/768 ,  H01L21/283

公开(公告)号：DE10331195A1

公开(公告)日：2004-02-12

申请号：DE10331195

申请日：2003-07-10

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： DOBUZINSKY DAVID M ,  FALTERMEIER JOHNATHAN ,  FLAITZ PHILIP ,  IWATAKE MICHAEL M ,  MALDEI MICHAEL ,  NINOMIYA LISA Y ,  RAMACHARDRAN RAVIKUMAR ,  SARDESAI VIRAI Y ,  SNAVELY COLLEEN M ,  WANG YUN YU

IPC: H01L21/20 ,  H01L21/285 ,  H01L21/306 ,  H01L21/8242

Abstract: In a method of preparing a DRAM wherein doped poly-Si is used as a CB contact as well as a source of doping in the contact region, and where in amorphous Si is used to fill the CB contact, the improvement of enhancing epitaxial regrowth in amorphous Poly CB contacts, comprising: a) affecting a CB liner reactive ion etch on a substrate to remove SiN and SiO; b) affecting an O plasma clean (in-situ or ex-situ); c) affecting a Huang AB clean; d) affecting a dilute hydrofluoric acid (DHF) clean; e) depositing amorphous Si; and f) annealing to recrystallize and regrow amorphous CB.