ENHANCED OVERLAY MEASUREMENT MARKS FOR OVERLAY ALIGNMENT AND EXPOSURE TOOL CONDITION CONTROL
    1.
    发明申请
    ENHANCED OVERLAY MEASUREMENT MARKS FOR OVERLAY ALIGNMENT AND EXPOSURE TOOL CONDITION CONTROL 审中-公开
    用于覆盖对齐和接触工具条件控制的增强覆盖标记

    公开(公告)号:WO0199150A2

    公开(公告)日:2001-12-27

    申请号:PCT/US0119679

    申请日:2001-06-20

    CPC classification number: G03F7/70633

    Abstract: In an overlay measurement mark comprising an inner box (2) and an outer box (4) located at a predetermined area on a mask through which patterns are formed on a semiconductor device, the improvement of an overlay mark that extends the overlay measurement range comprising: in-focused marks means printed at an optimal or ideal focal plane level from an illumination source, and de-focused marks means located at a different focus level from the optimal focal plane to provide image placement shift of the de-focused marks larger than that of the in-focused marks means to enable measurement of the shift of de-focused marks that are not attributable to a mechanical alignment error to be determined with greater accuracy.

    Abstract translation: 在包括位于掩模上的预定区域上的内盒(2)和外箱(4)的覆盖测量标记中,通过图案形成在半导体器件上的预定区域,覆盖标记的改进扩展了重叠测量范围,包括 :聚焦内标记意味着以最佳或理想的焦平面级别从照明源打印,并且解聚焦标记装置位于与最佳焦平面不同的聚焦水平上,以提供大于 被聚焦的标记的意思是使得能够以更高的精度确定不归因于机械对准误差的去焦点标记的偏移的测量。

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