公开(公告)号：WO0229887A3

公开(公告)日：2003-02-06

申请号：PCT/US0126998

申请日：2001-08-30

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： LU ZHIJIAN ,  NING XIAN J ,  YIN XIAOMING

IPC: H01L21/768

CPC classification number: H01L21/76811 ,  H01L21/76813

Abstract: A method for forming a dual damascene structure, employs the steps of forming a dielectric layer (14), patterning a first resist layer (16) on the dielectric layer to form a via pattern (26) and patterning a second resist layer (28) to form a line pattern (38) in communication with the via pattern formed on the first resist layer wherein the first resist layer includes exposed portions adjacent to the via pattern. The first resist layer, the second resist layer and the dielectric layer are etched such that the dielectric layer has a via (40) formed therein which gets deeper during the etching process. The dielectric layer has a trench (42) formed therein in communication with the via which gets deeper after the exposed portions of the first resist layer are consumed by the etching process.

Abstract translation: 一种用于形成双镶嵌结构的方法，采用以下步骤：形成电介质层（14），图案化介电层上的第一抗蚀剂层（16）以形成通孔图案（26）并使第二抗蚀剂层（28）构图， 以形成与形成在第一抗蚀剂层上的通孔图案相连的线图案，其中第一抗蚀剂层包括与通孔图案相邻的暴露部分。 蚀刻第一抗蚀剂层，第二抗蚀剂层和电介质层，使得介电层具有在其中形成的通孔（40），其在蚀刻工艺期间变深。 电介质层具有形成在其中的与通孔连通的沟槽（42），其在通过蚀刻工艺消耗第一抗蚀剂层的暴露部分之后变深。

公开(公告)号：WO0199150A2

公开(公告)日：2001-12-27

申请号：PCT/US0119679

申请日：2001-06-20

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： YIN XIAOMING ,  GOULD CHRISTOPHER ,  KUNKEL GERHARD

IPC: G03F7/20 ,  H01L

CPC classification number: G03F7/70633

Abstract: In an overlay measurement mark comprising an inner box (2) and an outer box (4) located at a predetermined area on a mask through which patterns are formed on a semiconductor device, the improvement of an overlay mark that extends the overlay measurement range comprising: in-focused marks means printed at an optimal or ideal focal plane level from an illumination source, and de-focused marks means located at a different focus level from the optimal focal plane to provide image placement shift of the de-focused marks larger than that of the in-focused marks means to enable measurement of the shift of de-focused marks that are not attributable to a mechanical alignment error to be determined with greater accuracy.

Abstract translation: 在包括位于掩模上的预定区域上的内盒（2）和外箱（4）的覆盖测量标记中，通过图案形成在半导体器件上的预定区域，覆盖标记的改进扩展了重叠测量范围，包括 ：聚焦内标记意味着以最佳或理想的焦平面级别从照明源打印，并且解聚焦标记装置位于与最佳焦平面不同的聚焦水平上，以提供大于 被聚焦的标记的意思是使得能够以更高的精度确定不归因于机械对准误差的去焦点标记的偏移的测量。