SYSTEM FOR SUPPLYING POLISHING LIQUID DURING CHEMICAL AND MECHANICAL POLISHING OF SEMICONDUCTOR WAFER

    公开(公告)号:JP2000353678A

    公开(公告)日:2000-12-19

    申请号:JP2000148694

    申请日:2000-05-19

    Abstract: PROBLEM TO BE SOLVED: To eliminate variance in quantity and temperature of a slurry which is in contact with the surface of a wafer. SOLUTION: A system for CMP is provided by moving cyclically and relatively an abrasive cloth 42 and a wafer W on a platen 41, and the wafer W is held by an opening 59a of a ring 59, which has a wearing face 59b surrounding the opening 59a. A slurry is supplied to the periphery WP of the wafer in a plurality of channels 61 provided on the wearing face. The ring is fixed on a lower side 58c of a carrier 58, fixed to the bottom of a spindle 56. The carrier is provided with a heat exchanger 65 for heating and cooling the slurry S. The path of the spindle connected with the conduit of the carrier supplies the slurry to the channels and provides a temperature regulating fluid to the heat exchanger and supplies a pressure fluid to the inside of the wafer.

    IMPROVED CMP EVENNESS
    2.
    发明专利

    公开(公告)号:JP2000280166A

    公开(公告)日:2000-10-10

    申请号:JP2000078478

    申请日:2000-03-21

    Abstract: PROBLEM TO BE SOLVED: To even the distribution of the slurry during the polishing by distributing the slurry from plural positions onto a polishing cloth. SOLUTION: A multi-position slurry dispenser 242 has a discharge pipe, and this discharge pipe has plural outlets 248 formed in the discharge pipe. The discharge pipe can be formed into a cylindrical shape. The discharge pipe is positioned along the radius of a polishing cloth. The slurry is distributed onto the polishing cloth 246 through outlets. The slurry is distributed to various parts of the polishing cloth 246 by having plural outlets, and distribution of the slurry capable of being controlled more for improvement of the CMP process is generated. The multi-position dispenser is optimally used in response to a set of an operation parameter and/or expendable supplies so as to form a slurry profile for generating a desirable polishing characteristic.

    CERIA SLURRY AND PROCESS FOR THE CHEMICAL-MECHANICAL POLISHING OF SILICON DIOXIDE
    3.
    发明申请
    CERIA SLURRY AND PROCESS FOR THE CHEMICAL-MECHANICAL POLISHING OF SILICON DIOXIDE 审中-公开
    二氧化硅化学机械抛光的CERIA浆料和工艺

    公开(公告)号:WO0199170A3

    公开(公告)日:2002-05-02

    申请号:PCT/US0119656

    申请日:2001-06-20

    CPC classification number: H01L21/31053 C09G1/02

    Abstract: An aqueous based ceria slurry system and method for chemical mechanical polishing of semiconductor wafers, the slurry comprising less than 5 wt % abrasive cerium oxide particles and up to about the critical micelle concentration of a cationic surfactant, absent other abrasives, in a neutral to alkaline pH solution is disclosed. Also disclosed is slurry comprising a blend of surfactants including a pre-existing amount of anionic surfactant and an added amount of cationic and/or non-ionic surfactant.

    Abstract translation: 一种用于半导体晶片的化学机械抛光的水性二氧化铈浆料系统和方法,所述浆料包含小于5重量%的磨料氧化铈颗粒,并且高达约临界胶束浓度的阳离子表面活性剂,没有其它研磨剂,在中性至碱性 公开了pH溶液。 还公开了包含表面活性剂的共混物的浆料,其包括预先存在量的阴离子表面活性剂和加入量的阳离子和/或非离子表面活性剂。

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