公开(公告)号：JP2000223668A

公开(公告)日：2000-08-11

申请号：JP2000022737

申请日：2000-01-31

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： GRUENING ULRIKE ,  TOBBEN DIRK ,  SPINDLER OSWALD ,  BEINTNER JOCHEN ,  LEE GILL ,  GABRIC ZVONIMIR

IPC: H01L27/108 ,  H01L21/31 ,  H01L21/316 ,  H01L21/8242

Abstract: PROBLEM TO BE SOLVED: To control the thickness of an insulation layer at a trench by growing an oxide deposition layer selectively at high rate above a conductive material and then removing the oxide deposition layer selectively except a part touching the conductive material in order to form an insulation layer on the conductive material in the trench. SOLUTION: A pad stack 16 is formed by laminating a pad oxide layer 18 and a pad nitride layer 20 sequentially on a substrate 12 and a deep trench 14 is made through the stack 16. After the trench 14 is filled with a conductive filler 24 to leave a recess 26, a nitride liner 36 is deposited on the inside of the recess to cover the pad stack 16. Subsequently, the nitride liner 36 is removed from the entire surface except for the side-wall of the trench 14 and an oxide deposition layer 40 is grown selectively at high rate. Thereafter, the oxide deposition layer 40 is removed except a part touching the conductive filler 24 in order to form an insulation layer 44 on the conductive filler 24.

公开(公告)号：WO0199158A2

公开(公告)日：2001-12-27

申请号：PCT/US0119578

申请日：2001-06-19

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： BEINTNER JOCHEN ,  MICHAELIS ALEXANDER ,  GRUENING ULRIKE ,  SPINDLER OSWALD ,  GABRIC ZVONIMIR

IPC: H01L21/316 ,  H01L21/32 ,  H01L21/8242 ,  H01L21/00

CPC classification number: H01L27/10861 ,  H01L21/31612 ,  H01L21/32 ,  H01L27/1087

Abstract: A method for forming an oxide collar in a trench, in accordance with the present invention, includes forming a trench (104) in a silicon substrate (102), and depositing and recessing a nitride liner (112) in the trench to expose a portion of the silicon substrate on sidewalls of the trench. An oxide (116) is deposited selective to the nitride liner on the portion of the silicon substrate. Residue oxide is removed from surfaces of the nitride liner to form a collar (116) in the trench.

Abstract translation: 根据本发明的在沟槽中形成氧化物环的方法包括在硅衬底（102）中形成沟槽（104），以及沉积和凹入沟槽中的氮化物衬垫（112）以暴露部分 的硅衬底在沟槽的侧壁上。 对硅衬底的部分上的氮化物衬垫选择性地沉积氧化物（116）。 从氮化物衬垫的表面去除残余氧化物，以在沟槽中形成套环（116）。