公开(公告)号：JP2000299282A

公开(公告)日：2000-10-24

申请号：JP2000086623

申请日：2000-03-27

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： TOEBBEN DIRK DR ,  LEE GILL YOUNG ,  LU ZHIJIAN

IPC: G03F7/004 ,  G03F7/09 ,  G03F7/11 ,  G03F7/26 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an ARC(antireflection coating) layer which effects more improved CD(critical dimension) control, so as to lessen a resist layer in reflectivity in a lithographic process. SOLUTION: This reduction method is carried out in a manner, where an antireflection coating layer 130 is deposited on a board 130, and a resist layer 170 is deposited on the ARC layer 130, where the ARC layer 130 is composed of a first section 135 and a second section 140, the first section 135 operates in an absorption mode, and the reflectivity of the second section 140 is so set as to reduce the reflectivity difference between the first section 135 and the resist layer 170.

公开(公告)号：JP2000340655A

公开(公告)日：2000-12-08

申请号：JP2000086588

申请日：2000-03-27

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： TOEBBEN DIRK DR

IPC: H01L21/28 ,  H01L21/205 ,  H01L21/60 ,  H01L21/768 ,  H01L21/8242 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To prevent the electrical short circuit between adjacent bit lines. SOLUTION: A silicon nitride 32 which is a second dielectric is exposed by etching a third dielectric BPSG 34, and a via is made in the exposed section of the second dielectric, and the lower-layer section of a gate oxide film 12 which is the first dielectric is exposed, and then a spacer 50 is made on the sidewall of the via. Then, a spacer consists of the material etched at an etching speed exceptionally slower than the etching speed of the first dielectric, and a contact hole is made by removing the exposed section of the first dielectric 12 by bringing etchant into contact with the spacer 50 and the exposed section of the first dielectric 12.