公开(公告)号：JP2000299282A

公开(公告)日：2000-10-24

申请号：JP2000086623

申请日：2000-03-27

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： TOEBBEN DIRK DR ,  LEE GILL YOUNG ,  LU ZHIJIAN

IPC: G03F7/004 ,  G03F7/09 ,  G03F7/11 ,  G03F7/26 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an ARC(antireflection coating) layer which effects more improved CD(critical dimension) control, so as to lessen a resist layer in reflectivity in a lithographic process. SOLUTION: This reduction method is carried out in a manner, where an antireflection coating layer 130 is deposited on a board 130, and a resist layer 170 is deposited on the ARC layer 130, where the ARC layer 130 is composed of a first section 135 and a second section 140, the first section 135 operates in an absorption mode, and the reflectivity of the second section 140 is so set as to reduce the reflectivity difference between the first section 135 and the resist layer 170.

公开(公告)号：WO0117010A9

公开(公告)日：2002-09-19

申请号：PCT/US0023850

申请日：2000-08-30

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： AKATSU HIROYUKI ,  DIVAKARUNI RAMACHANDRA ,  LEE GILL YOUNG

IPC: H01L21/28 ,  H01L21/336 ,  H01L21/60 ,  H01L21/768 ,  H01L21/8242

CPC classification number: H01L29/6659 ,  H01L21/28247 ,  H01L21/76897 ,  H01L27/10873 ,  H01L27/10894

Abstract: There is disclosed the process of forming a gate conductor for a semiconductor device. The process begins with the step of providing a semiconductor substrate having a gate stack formed thereon, the gate stack including a sidewall. Dielectric spacers are formed on the gate conductor sidewalls, the dielectric spacers comprising an inner spacer (36) and an outer spacer (38), the outer spacer being of a doped glass material. Ions are implanted into the semiconductor substrate outwardly of the dielectric spacers. The outer spacers are then removed.

Abstract translation: 公开了形成用于半导体器件的栅极导体的工艺。 该方法开始于提供其上形成有栅极堆叠的半导体衬底的步骤，栅叠层包括侧壁。 电介质间隔物形成在栅极导体侧壁上，电介质隔离物包括内部间隔物（36）和外部间隔物（38），外部间隔物是掺杂的玻璃材料。 离子在介质间隔物的外侧注入到半导体衬底中。 然后拆下外隔离物。