公开(公告)号：WO0245131A3

公开(公告)日：2003-05-15

申请号：PCT/US0144626

申请日：2001-11-28

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： CHUDZIK MICHAEL ,  TEWS HELMUT ,  MCSTAY IRENE ,  KUDELKA STEPHAN ,  SETTLEMYER KENNETH ,  JAMMY RAJARAO ,  FALTERMEIER JOHNATHAN

IPC: H01L21/02 ,  H01L21/8242

CPC classification number: H01L27/1087 ,  H01L28/84 ,  Y10S438/964

Abstract: Methods forming a trench region of a trench capacitor structure having increase surface area are provided. One method includes the steps of forming a discontinuous polysilicon layer (43) on exposed walls of a lower trench region, the discontinuous polysilicon layer having gaps (44) therein which expose portions of said substrate; oxidizing the lower trench region such that the exposed portions of said substrate provided by the gaps in the discontinuous polysilicon layer are oxidized into oxide material which forms a smooth and wavy layer with the discontinuous polysilicon layer; and etching said oxide material so as to form smooth hemispherical grooves (46) on the walls of the trench region.

Abstract translation: 提供了形成具有增加的表面积的沟槽电容器结构的沟槽区域的方法。 一种方法包括以下步骤：在下沟槽区域的暴露壁上形成不连续的多晶硅层（43），所述不连续的多晶硅层在其中具有暴露所述衬底部分的间隙（44） 氧化下沟槽区域，使得由不连续多晶硅层中的间隙提供的所述衬底的暴露部分被氧化成与不连续多晶硅层形成平滑波浪层的氧化物材料; 并蚀刻所述氧化物材料，以在沟槽区域的壁上形成平滑的半球状凹槽（46）。

公开(公告)号：DE102005063468B4

公开(公告)日：2009-05-20

申请号：DE102005063468

申请日：2005-11-15

Applicant: QIMONDA AG ,  IBM

Inventor： SETTLEMYER KENNETH ,  RAMACHANDRAN RAVIKUMAR ,  KIM MIN-SOO ,  KWON OH-JUNG

IPC: H01L21/8242 ,  H01L27/108

Abstract: A method of fabricating a bottle trench and a bottle trench capacitor. The method including: providing a substrate; forming a trench in the substrate, the trench having sidewalls and a bottom, the trench having an upper region adjacent to a top surface of the substrate and a lower region adjacent to the bottom of the trench; forming an oxidized layer of the substrate in the bottom region of the trench; and removing the oxidized layer of the substrate from the bottom region of the trench, a cross-sectional area of the lower region of the trench greater than a cross-sectional area of the upper region of the trench.

公开(公告)号：DE102005054431B4

公开(公告)日：2008-08-28

申请号：DE102005054431

申请日：2005-11-15

Applicant: IBM ,  QIMONDA AG

Inventor： SETTLEMYER KENNETH ,  RAMACHANDRAN RAVIKUMAR ,  KIM MIN-SOO ,  KWON OH-JUNG

IPC: H01L21/8242 ,  H01L27/108

Abstract: A method of fabricating a bottle trench and a bottle trench capacitor. The method including: providing a substrate; forming a trench in the substrate, the trench having sidewalls and a bottom, the trench having an upper region adjacent to a top surface of the substrate and a lower region adjacent to the bottom of the trench; forming an oxidized layer of the substrate in the bottom region of the trench; and removing the oxidized layer of the substrate from the bottom region of the trench, a cross-sectional area of the lower region of the trench greater than a cross-sectional area of the upper region of the trench.

公开(公告)号：DE102005054431A1

公开(公告)日：2006-06-29

申请号：DE102005054431

申请日：2005-11-15

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： SETTLEMYER KENNETH ,  RAMACHANDRAN RAVIKUMAR ,  KIM MIN-SOO ,  KWON OH-JUNG

IPC: H01L21/8242 ,  H01L27/108

Abstract: A method of fabricating a bottle trench and a bottle trench capacitor. The method including: providing a substrate; forming a trench in the substrate, the trench having sidewalls and a bottom, the trench having an upper region adjacent to a top surface of the substrate and a lower region adjacent to the bottom of the trench; forming an oxidized layer of the substrate in the bottom region of the trench; and removing the oxidized layer of the substrate from the bottom region of the trench, a cross-sectional area of the lower region of the trench greater than a cross-sectional area of the upper region of the trench.