公开(公告)号：US20200335165A1

公开(公告)日：2020-10-22

申请号：US16959225

申请日：2018-01-22

Applicant: INSTITUTE OF MICROELECTRONICS CHINESE ACADEMY OF SCIENCES

Inventor： Qi LIU ,  Wei WANG ,  Sen LIU ,  Feng ZHANG ,  Hangbing LV ,  Shibing LONG ,  Ming LIU

IPC: G11C13/00 ,  H03K19/20

Abstract: An operation method for integrating logic calculations and data storage based on a crossbar array structure of resistive switching devices. The calculation and storage functions of the method are based on the same hardware architecture, and the data storage is completed while performing calculation, thereby realizing the fusion of calculation and storage. The method includes applying a pulse sequence to a specified word line or bit line by a controller, configuring basic units of resistive switching devices to form different serial-parallel structures, such that three basic logic operations, i.e. NAND, OR, and COPY, are implemented and mutually combined on this basis, thereby implementing 16 types of binary Boolean logic and full addition operations, and on this basis, a method for implementing a parallel logic and full addition operations is provided.

公开(公告)号：US20200066984A1

公开(公告)日：2020-02-27

申请号：US16489266

申请日：2017-02-28

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Qi LIU ,  Xiaolong ZHAO ,  Sen LIU ,  Ming LIU ,  Hangbing LV ,  Shibing LONG ,  Yan WANG ,  Facai WU

IPC: H01L45/00

Abstract: The present disclosure provides a conductive bridge semiconductor device and a method of manufacturing the same. The conductive bridge semiconductor device includes a lower electrode, a resistive switching functional layer, an ion barrier layer and an active upper electrode from bottom to top, wherein the ion barrier layer is provided with certain holes through which active conductive ions pass. Based on this structure, the precise designing of the holes on the barrier layer facilitates the modulation of the quantity, size and density of the conduction paths in the conductive bridge semiconductor device, which enables that the conductive bridge semiconductor device can be modulated to be a nonvolatile conductive bridge resistive random access memory or a volatile conductive bridge selector. Based on the above method, ultra-low power nonvolatile conductive bridge memory and high driving-current volatile conductive bridge selector with controllable polarity are completed.