公开(公告)号：US20240122075A1

公开(公告)日：2024-04-11

申请号：US18264903

申请日：2021-03-19

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Guozhong XING ,  Long LIU ,  Di WANG ,  Huai LIN ,  Yan WANG ,  Xiaoxin XU ,  Ming LIU

IPC: H10N50/20 ,  G06N3/063 ,  H10B61/00 ,  H10N50/01 ,  H10N50/80 ,  H10N50/85

CPC classification number: H10N50/20 ,  G06N3/063 ,  H10B61/00 ,  H10N50/01 ,  H10N50/80 ,  H10N50/85

Abstract: An activation function generator based on a magnetic domain wall driven magnetic tunnel junction and a method for manufacturing the same are provided, including: a spin orbit coupling layer configured to generate a spin orbit torque; a ferromagnetic free layer formed on the spin orbit coupling layer and configured to provide a magnetic domain wall motion racetrack; a nonmagnetic barrier layer formed on the ferromagnetic free layer; a ferromagnetic reference layer formed on the nonmagnetic barrier layer; a top electrode formed on the ferromagnetic reference layer; antiferromagnetic pinning layers formed on two ends of the ferromagnetic free layer; a left electrode and a right electrode respectively formed at two positions on the antiferromagnetic pinning layers.

公开(公告)号：US20200066984A1

公开(公告)日：2020-02-27

申请号：US16489266

申请日：2017-02-28

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Qi LIU ,  Xiaolong ZHAO ,  Sen LIU ,  Ming LIU ,  Hangbing LV ,  Shibing LONG ,  Yan WANG ,  Facai WU

IPC: H01L45/00

Abstract: The present disclosure provides a conductive bridge semiconductor device and a method of manufacturing the same. The conductive bridge semiconductor device includes a lower electrode, a resistive switching functional layer, an ion barrier layer and an active upper electrode from bottom to top, wherein the ion barrier layer is provided with certain holes through which active conductive ions pass. Based on this structure, the precise designing of the holes on the barrier layer facilitates the modulation of the quantity, size and density of the conduction paths in the conductive bridge semiconductor device, which enables that the conductive bridge semiconductor device can be modulated to be a nonvolatile conductive bridge resistive random access memory or a volatile conductive bridge selector. Based on the above method, ultra-low power nonvolatile conductive bridge memory and high driving-current volatile conductive bridge selector with controllable polarity are completed.