公开(公告)号：US09831089B2

公开(公告)日：2017-11-28

申请号：US14407210

申请日：2013-08-30

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Hong Yang ,  Wenwu Wang ,  Jiang Yan ,  Weichun Luo

IPC: H01L21/28 ,  H01L21/8238 ,  H01L21/321 ,  H01L29/51 ,  H01L29/66

CPC classification number: H01L21/28088 ,  H01L21/321 ,  H01L21/823842 ,  H01L29/517 ,  H01L29/66545

Abstract: A method for adjusting an effective work function of a metal gate. The method includes forming a metal gate arrangement comprising at least a metal work function layer, and performing plasma treatment on at least one layer in the metal gate arrangement. In this way, it is possible to adjust the effective work function of the metal gate in a relatively flexible way.