Abstract:
PROBLEM TO BE SOLVED: To provide a high strength oxide superconducting laminated substrate which has an oxide superconducting crystal substrate that is provided with high flatness and high crystal properties and used as an electronic device substrate for forming on it films such as insulation film and electrically conductive film for a circuit, and is capable of preventing cracks due to heat treatment in the formation of such an insulating film or conductive film on the oxide superconducting crystal substrate, from being caused in the crystal substrate. SOLUTION: This oxide superconducting laminated substrate 1 is manufactured by joining an oxide superconducting crystal substrate 3 having high flatness and high crystal properties to a high strength reinforcing crystal substrate 5, while interposing between them, an intermediate layer 7 consisting of a material having a lower melting point than that of the constituent oxide superconducting single crystal or polycrystal of the oxide superconducting crystal substrate 3.
Abstract:
PROBLEM TO BE SOLVED: To suppress the thermal load of a lead wire by forming thin fibers of an oxide superconductor for electrically connecting an electronic device using a superconductor to external equipment. SOLUTION: A superconducting system 1 is provided with an electronic device 2 using a superconductor and thin fibers 3 which are formed of an oxide superconductor and electrically connected to external equipment successively through a switchboard 4 and normal-conductor fibers 5. The fibers 5 are formed of a normal conductor, such as copper, etc., and directly connected to the external equipment. The switchboard 4 is electrically connected with the thin fibers 3 and normal-conductor fibers 5 so that the switchboard 4 may turn on/off a circuit. Therefore, the thermal load of a lead wire can be suppressed.
Abstract:
PROBLEM TO BE SOLVED: To provide an oxide superconducting element having a simpler structure. SOLUTION: An element 11 also used as a substrate is made of an oxide superconducting single crystal or a thick film. The element 11 having a thick size and a flat surface can be obtained by mechanically polishing a surface 11a of the element 11. Laminated on the polished surface of the element is an interlayer insulating layer 12, and on which an oxide superconducting layer 13 as a lower electrode, a barrier layer 14 and an oxide superconducting layer 15 are sequentially laminated in this order, thus completing an oxide superconducting element.
Abstract:
PROBLEM TO BE SOLVED: To reduce the contact resistance at the interface between a metallic terminal and an oxide superconductor by immersing the end of a bar-like member formed of the oxide superconductor in a molten normal conductor. SOLUTION: An alumina (Al2O3) bar 3 is attached to the unimmersed end of a bar-like member 1 composed of a directionally solidified single-crystal Y-based high-temperature superconductor. In addition, a molten normal conductor 2 is stored in an alumina crucible 4 and the temperature of the conductor 2 is set at a value which is equal to or lower than the peritectic temperature of the oxide superconductor forming the bar-like member 1. The other end section 1a of the bar-like member 1 formed of the oxide superconductor is immersed in the molten normal conductor 2. Therefore, the contact resistance at the interface between a metallic terminal and the oxide superconductor can be reduced.
Abstract:
PROBLEM TO BE SOLVED: To provide a power circuit which includes a superconducting power circuit, capable of obtaining direct current of low voltage and high magnitude with high conversion efficiency. SOLUTION: This superconducting power circuit A comprises a bridge circuit 5 formed by building superconducting switching devices 1-4, having a Josephson junction capable of flexibly performing switching operations between a superconducting status and a registive status by means of an external magnetic field in respective sides of a diamond bridge, a control unit 6 which switches a pair of superconducting switching devices 1, 3, arranged diagonally in the bridge circuit 5 by means of the external magnetic field, into the superconducting status and the other pair of superconducting switching devices 2, 4 into the registive status.
Abstract:
PROBLEM TO BE SOLVED: To provide an oxide superconducting crystalline substrate or a dielectric substrate used as substrate for electronic device, which is provided with an insulating film and a conductive film for circuit, having high flatness and high crystallinity, and to perform at least one of the followings: to avoid cracks on the oxide superconducting crystalline substrate due to a heat treatment performed during the formation of the insulating film and the conductive film and to enable connections between electrodes and wires provided on the upper and lower sides of substrates easily. SOLUTION: An oxide superconducting laminated substrate 1 comprises an oxide superconducting crystalline substrate 3 with a high flatness and a high crystallinity and a reinforcing crystalline substrate 1 with high strength, wherein the substrate 3 is bonded to the substrate 1 through a thermal application.
Abstract:
PROBLEM TO BE SOLVED: To make a Josephson junction large in IcRn product at an arbitrary position and with good reproducibility. SOLUTION: An Au film 2 is deposited on an MgO (100) substrate 1, and a Ga converging ion beam 50 nm in beam diameter is applied to the section, where a junction is desired to be formed, to form an irradiated region 3 on the surface of the substrate, and then the Au film 2 is removed. Subsequently, a YBCO film 4 is deposited over the entire surface of the substrate by pulse laser deposition method, and it is patterned to pase over the irradiated region 3 to make a wring. The YBCO film on the irradiated region becomes a normal conducting state, and an SNS junction is formed, together with the superconducting YBCO films on both sides. IcRn product is improved more than the conventional product.
Abstract:
PROBLEM TO BE SOLVED: To provide a high-temperature superconducting Josephson junction which is uniform and excellent in characteristics by a method, wherein a barrier layer uniform in thickness and composition is formed keeping high in reproducibility. SOLUTION: This manufacturing method comprises a first step a first superconducting layer 2 is formed on a substrate 1, a second step where an insulating film 5 is formed on the first conducting layer 2, a third step where the insulating film 5 is etched so as to be provided with a slope, a fourth step where the first superconducting layer 2 is etched so as to be provided with a slope using the etched insulating film 5 as a mask, a fifth step where a barrier layer 3 is formed on the surface of the slope, and a sixth step where a second superconducting layer 4 is formed on the barrier layer 3 and the slope of the insulating layer 5.
Abstract:
Five novel organic substances comprising a combination of bis(ethylenedithiolo)tetrathiafulvalene (hereinafter referred to as BEDT-TTF) with a metal cyanate anion, i.e. (BEDT-TTF)4[Ni(CN)4]H2O: bis(ethylenedithiolo)-tetrathiafulvalene tetracyanonickelate monohydrate, (BEDT-TTF)4[Pt(CN)4]H2O, (BEDT-TTF)[Pd(CN)2], (BEDT-TTF)4[Pd(CN)4]H2O, and (BEDT-TTF)4[Pd(CN)4]. The BEDT-TTF functions as a donor in the crystals of the above substances to thereby impart characteristics as insulator, metal or superconductor. The development of superconductivity can be expected for a BEDT-TTF compound having a coordinated metal cyanate anion which can readily build such a large skeleton as to increase the effective volume, such as the above substances.