公开(公告)号：HK1131469A1

公开(公告)日：2010-01-22

申请号：HK09109594

申请日：2009-10-16

Applicant: INTEL CORP

Inventor： SHIFREN LUCIAN ,  KAVALIEROS JACK T ,  CEA STEVEN M ,  WEBER CORY E ,  BRASK JUSTIN K

IPC: H01L20060101

公开(公告)号：GB2448258B

公开(公告)日：2011-08-17

申请号：GB0812725

申请日：2007-03-29

Applicant: INTEL CORP

Inventor： SHIFREN LUCIAN ,  KAVALIEROS JACK ,  CEA STEVEN M ,  WEBER CORY E ,  BRASK JUSTIN

IPC: H01L21/8238 ,  H01L21/336

公开(公告)号：DE112007000662B4

公开(公告)日：2010-09-23

申请号：DE112007000662

申请日：2007-03-29

Applicant: INTEL CORP

Inventor： SHIFREN LUCIAN ,  KAVALIEROS JACK T ,  CEA STEVEN M ,  WEBER CORY E ,  BRASK JUSTIN K

IPC: H01L21/8238 ,  H01L21/336 ,  H01L27/092

公开(公告)号：DE112007000662T5

公开(公告)日：2009-04-30

申请号：DE112007000662

申请日：2007-03-29

Applicant: INTEL CORP

Inventor： SHIFREN LUCIAN ,  KAVALIER JACK T ,  CEA STEVEN M ,  WEBER CORY E ,  BRASK JUSTIN K

IPC: H01L21/8238 ,  H01L27/092

公开(公告)号：GB2448258A

公开(公告)日：2008-10-08

申请号：GB0812725

申请日：2007-03-29

Applicant: INTEL CORP

Inventor： SHIFREN LUCIAN ,  KAVALIEROS JACK ,  CEA STEVEN M ,  WEBER CORY E ,  BRASK JUSTIN

IPC: H01L21/8238 ,  H01L21/336

Abstract: A method for selectively relieving channel stress for n-channel transistors with recessed, epitaxial SiGe source and drain regions is described. This increases the electron mobility for the n-channel transistors without affecting the strain in p-channel transistors. The SiGe provides lower resistance when a silicide is formed.