公开(公告)号：GB2447158B

公开(公告)日：2011-03-02

申请号：GB0807714

申请日：2006-12-06

Applicant: INTEL CORP

Inventor： RAO VALLURI ,  DOROS THEODORE G ,  MA QING ,  SESHAN KRISHNA ,  WANG LI-PENG

IPC: H03H3/04 ,  H03H9/02 ,  H03H9/17 ,  H03H9/58

Abstract: Multiple FBARs may be manufactured on a single wafer and later diced. Ideally, all devices formed in a wafer would have the same resonance frequency. However, due to manufacturing variances, the frequency response of the FBAR devices may vary slightly across the wafer. An RF map may be created to determine zones over the wafer where FBARs in that zone all vary from a target frequency by a similar degree. A tuning layer may be deposited over the wafer. Lithographically patterned features to the tuning layer based on the zones identified by the RF map may be used to correct the FBARs to a target resonance frequency with the FBARs still intact on the wafer.

公开(公告)号：GB2447158A

公开(公告)日：2008-09-03

申请号：GB0807714

申请日：2006-12-06

Applicant: INTEL CORP

Inventor： RAO VALLURI ,  DOROS THEODORE G ,  MA QING ,  SESHAN KRISHNA ,  WANG LI-PENG

IPC: H03H9/02 ,  H03H3/04 ,  H03H9/17 ,  H03H9/58

Abstract: Multiple FBARs may be manufactured on a single wafer and later diced. Ideally, all devices formed in a wafer would have the same resonance frequency. However, due to manufacturing variances, the frequency response of the FBAR devices may vary slightly across the wafer. An RF map may be created to determine zones (50, 52) over the wafer where FBARs in that zone all vary from a target frequency by a similar degree. A tuning layer (40) may be deposited over the wafer. Lithographically patterned features to the tuning layer based on the zones identified by the RF map may be used to correct the FBARs to a target resonance frequency with the FBARs still intact on the wafer.