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    Method of manufacturing thin-film bulk acoustic resonator filter, and circuit using the filter
    2.
    发明专利
    Method of manufacturing thin-film bulk acoustic resonator filter, and circuit using the filter 有权
    制造薄膜大容量谐振谐振滤波器的方法和使用滤波器的电路

    公开(公告)号：JP2010063142A

    公开(公告)日：2010-03-18

    申请号：JP2009254140

    申请日：2009-11-05

    Applicant: Intel Corp ,  インテル コーポレイション

    Inventor： WANG LI-PENG ,  BAR-SADEH EYAL ,  RAO VALLURI ,  HECK JOHN ,  MA QING ,  TRAN QUAN ,  TALALYEVSKY ALEXANDER ,  GINSBURG EYAL

    IPC: H03H3/02 ,  H03H9/24 ,  H01L41/09 ,  H01L41/22 ,  H03H9/17 ,  H03H9/54 ,  H03H9/56

    CPC classification number: H03H9/564 ,  H03H3/02 ,  Y10T29/42

    Abstract: PROBLEM TO BE SOLVED: To provide a better method of forming a thin-film bulk acoustic resonator filter. SOLUTION: In the method of manufacturing a thin-film bulk acoustic resonator filer, a thin-film bulk acoustic resonator filter 10 includes a plurality of thin-film bulk acoustic resonators 38a to 38g series-connected and branched on the same film 35. The thin-film bulk acoustic resonators 38a to 38g are made of a single common lower conductive layer to have respective bottom electrodes of the thin-film bulk acoustic resonators. The single common conductive layer is provided to form respective upper electrodes of the thin-film bulk acoustic resonators 38a to 38g. A common piezoelectric thin-film layer, which may or may not be patterned, is formed as a thin film continuous as a single or not continuous. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种更好的形成薄膜体声波谐振器滤波器的方法。 解决方案：在制造薄膜体声波谐振器滤波器的方法中，薄膜体声波谐振器滤波器10包括在相同的膜上串联和分支的多个薄膜体声波谐振器38a至38g 薄膜体声共振器38a至38g由单个公共下导电层制成，以具有薄膜体声波谐振器的相应底部电极。 提供单个公共导电层以形成薄膜体声波谐振器38a至38g的相应上电极。 可以或可以不被图案化的公共压电薄膜层作为单独的或不连续的连续的薄膜形成。 版权所有（C）2010，JPO＆INPIT

    MANUFACTURING FILM BULK ACOUSTIC RESONATOR FILTERS
    3.
    发明申请
    MANUFACTURING FILM BULK ACOUSTIC RESONATOR FILTERS 审中-公开
    制造膜散装声学谐振器滤波器

    公开(公告)号：WO2004036744A3

    公开(公告)日：2004-07-22

    申请号：PCT/US0324142

    申请日：2003-08-01

    Applicant: INTEL CORP

    Inventor： WANG LI-PENG ,  BAR-SADEH EYAL ,  RAO VALLURI ,  HECK JOHN ,  MA QING ,  TRAN QUAN ,  TALALYEVSKY ALEXANDER ,  GINSBURG EYAL

    IPC: H03H9/24 ,  H03H3/02 ,  H03H9/56 ,  H03H9/205

    CPC classification number: H03H9/564 ,  H03H3/02 ,  Y10T29/42

    Abstract: A film bulk acoustic resonator filter may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators formed on the same membrane. Each of the film bulk acoustic resonators may be formed from a common lower conductive layer which is defined to form the bottom electrode of each film bulk acoustic resonator. A common top conductive layer may be defined to form each top electrode of each film bulk acoustic resonator. A common piezoelectric film layer, that may or may not be patterned, forms a continuous or discontinuous film.

    Abstract translation: 薄膜体声波谐振器滤波器可以形成有在相同膜上形成的多个互连的串联和分流膜体声波谐振器。 每个薄膜体声波谐振器可以由共同的下导电层形成，该下导电层被限定为形成每个薄膜体声波谐振器的下电极。 可以限定公共顶部导电层以形成每个薄膜体声波谐振器的每个顶部电极。 常见的压电薄膜层可以或不可以被图案化，形成连续或不连续的薄膜。

    GAS PHASE CHEMICAL SENSOR BASED ON FILM BULK RESONATORS (FBAR)
    4.
    发明申请
    GAS PHASE CHEMICAL SENSOR BASED ON FILM BULK RESONATORS (FBAR) 审中-公开
    基于薄膜共振器（FBAR）的气相化学传感器

    公开(公告)号：WO2007005701A2

    公开(公告)日：2007-01-11

    申请号：PCT/US2006025755

    申请日：2006-06-29

    Applicant: INTEL CORP ,  MA QING ,  WANG LI-PENG ,  RAO VALLURI

    Inventor： MA QING ,  WANG LI-PENG ,  RAO VALLURI

    CPC classification number: G01N29/022 ,  G01N29/036 ,  G01N33/54373 ,  G01N2291/021 ,  G01N2291/0255 ,  G01N2291/0256 ,  G01N2291/0426 ,  G01N2291/106

    Abstract: An FBAR device may be chemically functionalized by depositing an interactive layer so that targeted chemicals are preferentially adsorbed. Such miniaturized chemical sensors may be combined with wireless network technology. For example, a chemical sensor may be integrated in a cell phone, PDA, a watch, or a car with wireless connection and GPS. Since such devices are widely populated, a national sensor network may be established. Consequently, a national toxicity map can be generated in real time. Detailed chemical information may be obtained, such as if a chemical is released by a source fixed on ground or by a moving object, or if is spread by explosives or by wind and so on.

    Abstract translation: FBAR器件可以通过沉积交互层进行化学功能化，从而优先吸附目标化学物质。 这种小型化学传感器可以与无线网络技术组合。 例如，化学传感器可以集成在具有无线连接和GPS的手机，PDA，手表或汽车中。 由于这样的设备被广泛地填充，所以可以建立国家传感器网络。 因此，可以实时生成国家毒性图。 可以获得详细的化学信息，例如化学品被固定在地面上的源或被移动的物体释放，或者如果被爆炸物或风等传播。

    A sigma-delta analog-to-digital converter (ADC) which has an integral calibration system comprising calibration digital-to-analog converters (DACs).
    6.
    发明专利
    A sigma-delta analog-to-digital converter (ADC) which has an integral calibration system comprising calibration digital-to-analog converters (DACs). 未知

    公开(公告)号：GB2453255A

    公开(公告)日：2009-04-01

    申请号：GB0817723

    申请日：2008-09-26

    Applicant: INTEL CORP

    Inventor： GERFERS FRIEDEL ,  WANG LI-PENG

    IPC: H03M3/04 ,  H03M1/10

    Abstract: A method and apparatus for calibrating a sigma-delta analogue-to-digital converter (ADC) which comprises an n-bit feedback digital-to-analogue converter as part of its feedback loop, the digital-to-analogue converter (DAC) having a plurality of cells and including at least one calibration digital-to-analogue converter. The calibration DAC may comprise a single global calibration digital-to-analogue converter associated with a plurality of cells. The apparatus may further comprise a state machine which receives a portion of the digital output of the ADC in accordance with a sequence of values measured during a calibration process. The sequence of values may be associated with a cell of the feedback converter.

    FILM BULK ACOUSTIC RESONATOR STRUCTURE AND METHOD OF PRODUCING IT
    8.
    发明专利
    FILM BULK ACOUSTIC RESONATOR STRUCTURE AND METHOD OF PRODUCING IT 未知

    公开(公告)号：AU2002357319A1

    公开(公告)日：2003-06-30

    申请号：AU2002357319

    申请日：2002-12-17

    Applicant: INTEL CORP

    Inventor： RAO VALLURI ,  MA QING ,  WANG LI-PENG

    IPC: H03H3/02 ,  H03H9/17 ,  H03H9/58 ,  H03H9/15

    Abstract: A film bulk acoustic resonator is formed on a substrate having a major surface. The film bulk acoustic resonator includes an elongated stack. The elongated stack includes a layer of piezoelectric material positioned between a first conductive layer deposited on a first surface of the layer of piezoelectric material, and a second conductive layer deposited on a second surface of the layer of piezoelectric material. The elongated stack is positioned substantially perpendicular with respect to the major surface of the substrate. The first and second conductive layers are placed on the layer of piezoelectric material substantially simultaneously and in one processing step. The major surface of the substrate is in a horizontal plane and the stack of the film bulk acoustic resonator is in a substantially vertical plane. The resonator structure formed may be used either as a resonator or a filter.

    9.
    发明专利
    未知

    公开(公告)号：DE60318283T2

    公开(公告)日：2008-12-11

    申请号：DE60318283

    申请日：2003-07-24

    Applicant: INTEL CORP

    Inventor： WANG LI-PENG ,  BAR-SADEH EYAL ,  RAO VALLURI ,  HECK JOHN ,  MA QING ,  TRAN QUAN ,  TALALYEVSKY ALEXANDER ,  GINSBURG EYAL

    IPC: H03H3/02 ,  H03H9/24 ,  H03H9/205 ,  H03H9/54 ,  H03H9/56

    Abstract: A film bulk acoustic resonator filter (10) may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators (38) formed on the same membrane (35). Each of the film bulk acoustic resonators (38) may be formed from a common lower conductive layer which is defined to form the bottom electrode (32) of each film bulk acoustic resonator (38). A common top conductive layer may be defined to form each top electrode (36) of each film bulk acoustic resonator (38). A common piezoelectric film layer (34), that may or may not be patterned, forms a continuous or discontinuous film.

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